5秒后页面跳转
JAN1N969C-1 PDF预览

JAN1N969C-1

更新时间: 2024-02-22 08:39:53
品牌 Logo 应用领域
CDI-DIODE 测试二极管
页数 文件大小 规格书
28页 208K
描述
Zener Diode, 22V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH,

JAN1N969C-1 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
二极管类型:ZENER DIODEBase Number Matches:1

JAN1N969C-1 数据手册

 浏览型号JAN1N969C-1的Datasheet PDF文件第2页浏览型号JAN1N969C-1的Datasheet PDF文件第3页浏览型号JAN1N969C-1的Datasheet PDF文件第4页浏览型号JAN1N969C-1的Datasheet PDF文件第5页浏览型号JAN1N969C-1的Datasheet PDF文件第6页浏览型号JAN1N969C-1的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 6 January 2006.  
INCH-POUND  
MIL-PRF-19500/117N  
6 October 2005  
SUPERSEDING  
MIL-PRF-19500/117M  
13 January 2004  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,  
TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH  
1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1  
THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC  
JANS level (see 6.4).  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall  
consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator  
diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided  
for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for  
each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).  
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and  
as follows:  
a. PTL = 500 mW, (DO-35) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink  
at L = .375 inch (9.53 mm). Derate IZ to 0.0 mA dc at +175°C.  
b. PTEC = 500 mW, (DO-213AA) at TEC = +125°C, derate to 0 at +175°C. -65°C TJ +175°C; -65°C TSTG  
+175°C.  
c. PT(PCB) = 500 mW, TA = 75°C.  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,  
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at http://assist.daps.dla.mil.  
AMSC N/A  
FSC 5961  

与JAN1N969C-1相关器件

型号 品牌 描述 获取价格 数据表
JAN1N969CUR-1 MICROSEMI Silicon 500 mW Zener Diodes

获取价格

JAN1N969CUR-1 CDI-DIODE Zener Diode, 22V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,

获取价格

JAN1N969D MICROSEMI Silicon 500 mW Zener Diodes

获取价格

JAN1N969D-1 MICROSEMI Silicon 500 mW Zener Diodes

获取价格

JAN1N969D-1 CDI-DIODE Zener Diode, 22V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,

获取价格

JAN1N969DUR-1 CDI-DIODE Zener Diode, 22V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA,

获取价格