Datasheet > JAN1N4454UR-1

JAN1N4454UR-1

更新时间： 2024-10-02 23:16:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
1页	68K
描述
MINI-MELF-SMD Silicon Swithching Diode

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中文翻译

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数据手册
替代型号

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JAN1N4454UR-1 数据手册

MINI-MELF-SMD

Silicon Switching Diode

1N4454UR-1

Applications

Used in general purpose applications,

where performance, space and

switching speed are important.

LL-34/35 MINI MELF

Surface Mount Package DO-213AA

Features

Six sigma quality

Metallurgically bonded

Both End Caps

0.10"REF

0.016-.022"

2.54 mmREF

0.41-0.55 mm

BKC's Sigma Bond™ plating

for problem free solderability

Also comes in DO-35 glass package

Full UR approval to Mil-S-19500 /144

Available up to JANTXV levels

Length

Dia.

0.13-0.146"

.063-.067"

3.30-3.70 mm

1.6-1.7mm

"S" level screening available to Source Control Drawings

Maximum Ratings

Symbol

PIV

I_Avg

Value

75 (Min.)

200

Unit

Volts

mAmps

Amp

mWatts

^oC

Peak Inverse Voltage @ 5µA & 0.1µA @ -55^oC

AverageRectifiedCurrent

Continuous Forward Current

I_Fdc

300

Peak Surge Current (t_peak= 1 sec.)

Power Dissipation T_L= 50 ^oC, L = 3/8" from body

Operating Temperature Range

Storage Temperature Range

I_peak

P_tot

1.0

500

T_Op

T_St

200

-65 to +200

Limits

^oC

Electrical Characteristics @ 25^oC*

Forward Voltage @ I_F= 10 mA

Breakdown Voltage @ I_R= 10 mA

Reverse Leakage Current @ V_R= 50 V

Symbol

V_F

Unit

1.0(max)

75 (min)

Volts

µA

PIV

I_R

0.1 (max)

100 (max)

2.0 (max)

Reverse Leakage Current @ V_R= 50 V, T=150 C

Capacitance @ V_R= 0 V, f = 1mHz

I_R

µA

C_T

Reverse Recovery Time (note 1)/(note 2)

Forward Recovery Voltage (note 3)

t_rr

2.0/4.0 (max) nSecs

3.0 (max) Volts

V_fr

Note 1: Per Method 4031-A with I_F= I_R= 10 mA, R_L= 100 Ohms, C = 3 Pf.

Note 2: Per Method 4031-A with I_F= 10 mA, R_L= 100 Ohms, Vr = 6 V, Recover to 1.0 mA.

Note 3: Per Method 4026 with I_F= 100 mA, R_L= 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-

tition Rate = 5 - 100 KHz. *Unless Otherwise Specified

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

中文翻译

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JAN1N4454UR-1 替代型号

型号	品牌	替代类型	描述	数据表
CDLL4454	MICROSEMI	类似代替	SEITCHING DIODE
JANTXV1N4454UR-1	MICROSEMI	类似代替	MINI-MELF-SMD Silicon Swithching Diode
JANTX1N4454UR-1	MICROSEMI	类似代替	MINI-MELF-SMD Silicon Swithching Diode

与JAN1N4454UR-1相关器件

型号	品牌	获取价格	描述	数据表
JAN1N4454X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.1A, 75V V(RRM), Silicon,
JAN1N4458	MICROSEMI	获取价格	Military Silicon Power Rectifier
JAN1N4458R	MICROSEMI	获取价格	Military Silicon Power Rectifier
JAN1N4459	MICROSEMI	获取价格	Military Silicon Power Rectifier
JAN1N4459R	MICROSEMI	获取价格	Military Silicon Power Rectifier
JAN1N4460	MICROSEMI	获取价格	1.5 WATT ZENER DIODES
JAN1N4460	CDI-DIODE	获取价格	Zener Diode, 6.2V V(Z), 5%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, SIMILAR
JAN1N4460C	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS P
JAN1N4460CME3	MICROSEMI	获取价格	VOIDLESS HERMETICALLY SEALED 1.5 WATT GLASS ZENER DIODES
JAN1N4460CUS	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 2%, 1.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, D-5A, 2

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