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J202D26Z PDF预览

J202D26Z

更新时间: 2024-10-02 15:44:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
13页 851K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

J202D26Z 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
HTS代码:8541.21.00.95风险等级:5.19
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTIONJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

J202D26Z 数据手册

 浏览型号J202D26Z的Datasheet PDF文件第2页浏览型号J202D26Z的Datasheet PDF文件第3页浏览型号J202D26Z的Datasheet PDF文件第4页浏览型号J202D26Z的Datasheet PDF文件第5页浏览型号J202D26Z的Datasheet PDF文件第6页浏览型号J202D26Z的Datasheet PDF文件第7页 
MMBFJ201  
MMBFJ202  
J201  
J202  
G
S
TO-92  
G
S
SOT-23  
Mark: 62P / 62Q  
NOTE: Source & Drain  
are interchangeable  
D
D
N-Channel General Purpose Amplifier  
This device is designed primarily for low level audio and general  
purpose applications with high impedance signal sources. Sourced  
from Process 52.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
40  
- 40  
V
V
VGS  
IGF  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
5
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J202-203  
*MMBFJ202-203  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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