MMBFJ175
MMBFJ176
MMBFJ177
J174
J175
J176
J177
G
S
TO-92
S
D
SOT-23
Mark: 6W / 6X / 6Y
G
D
NOTE: Source & Drain
are interchangeable
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
- 30
30
V
V
VGS
5
IGF
50
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
J174 -177
*MMBFJ175-177
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
350
2.8
125
225
1.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation