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J110D26Z PDF预览

J110D26Z

更新时间: 2024-02-22 07:59:56
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
12页 729K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92

J110D26Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
HTS代码:8541.21.00.95风险等级:5.03
配置:SINGLE最大漏源导通电阻:18 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):15 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.4 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

J110D26Z 数据手册

 浏览型号J110D26Z的Datasheet PDF文件第2页浏览型号J110D26Z的Datasheet PDF文件第3页浏览型号J110D26Z的Datasheet PDF文件第4页浏览型号J110D26Z的Datasheet PDF文件第5页浏览型号J110D26Z的Datasheet PDF文件第6页浏览型号J110D26Z的Datasheet PDF文件第7页 
MMBFJ108  
J108  
J109  
J110  
G
S
SOT-23  
Mark: I8  
D
TO-92  
G
NOTE: Source & Drain  
are interchangeable  
S
D
N-Channel Switch  
This device is designed for analog or digital switching applications where  
very low on resistance is mandatory. Sourced from Process 58.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
25  
- 25  
V
V
VGS  
IGF  
10  
mA  
5
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J108-110  
*MMBFJ108  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

J110D26Z 替代型号

型号 品牌 替代类型 描述 数据表
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J110G ONSEMI

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JFET − General Purpose N−Channel − Depletion

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