Datasheet > J106-18-E3

J106-18-E3

更新时间： 2024-02-04 19:53:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	67K
描述
Transistor

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技术参数
数据手册

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J106-18-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	135 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.36 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

J106-18-E3 数据手册

J105/106/107

Vishay Siliconix

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Limits

J105

J106

J107

Parameter

Symbol

Test Conditions

Typ^aMin Max Min Max Min Max Unit

Static

Gate-Source

Breakdown Voltage

= –1 ꢁA , V = 0 V

–35

–25

(BR)GSS

Gate-Source Cutoff Voltage

= 5 V, I = 1 ꢁA

–4.5

–10

–3

–2

–6

–3

–0.5

–4.5

–3

GS(off)

Saturation Drain Current

= 15 V, V = 0 V

500

200

100

DSS

= –15 V, V = 0 V

–0.02

–10

–0.01

0.01

Gate Reverse Current

GSS

= 125_C

Gate Operating Current

= 10 V, I = 25 mA

= 5 V, V = –10 V

Drain Cutoff Current

D(off)

= 125_C

Drain-Source On-Resistance

Gate-Source Forward Voltage

= 0 V, I = 1 mA

ꢀ

DS(on)

= 1 mA , V = 0 V

0.7

GS(F)

Dynamic

Common-Source Forward

Transconductance

= 10 V, I = 25 mA

f = 1 kHz

Common-Source

Output Conductance

= 0 V, I = 0 mA

f = 1 kHz

Drain-Source On-Resistance

ꢀ

ds(on)

Common-Source

Input Capacitance

= 0 V, V = 0 V

f = 1 MHz

120

160

iss

Common-Source Reverse Transfer

Capacitance

= 0 V, V = –10 V

rss

f = 1 MHz

Equivalent Input

Noise Voltage

= 10 V, I = 25 mA

f = 1 kHz

nV⁄

√Hz

Switching

d(on)

Turn-On Time

= 1.5 V, V

= 0 V

GS(H)

See Switching Diagram

d(off)

Turn-Off Time

Notes

a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NVA

b. Pulse test: PW v300 ꢁs duty cycle v3%.

Document Number: 70230

S-04028—Rev. D, 04-Jun-01

www.vishay.com

7-2

123 4 5 6

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