Datasheet > IXBOD1-17RD

IXBOD1-17RD

更新时间： 2023-12-06 20:13:04

品牌	Logo	应用领域
力特 - LITTELFUSE		二极管
页数	文件大小	规格书
7页	155K
描述
Breakover Gen1系列提供各种电压范围的转折二极管，具有快速导通特性、低温度依赖性和低漏电流。

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IXBOD1-17RD 数据手册

IXBOD1...R(D)

IXBOD1 - 12RD... - 19RD (2 Elements)

Symbol Deﬁnitions

Ratings

Conditions

min. typ. max.

breakover voltage

V_BO

V_BO(T_VJ) = V_{BO, 25°C}[1 + K_T(T_VJ- 25°C)]

IXBOD 1 -12RD

1150 1200 1250

1250 1300 1350

1350 1400 1450

1450 1500 1550

1550 1600 1650

1650 1700 1750

1750 1800 1850

1850 1900 1950

IXBOD 1 -13RD

IXBOD 1 -14RD

IXBOD 1 -15RD

IXBOD 1 -16RD

IXBOD 1 -17RD

IXBOD 1 -18RD

IXBOD 1 -19RD

RMS current

I_RMS

f = 50 Hz

pins soldered to printed circuit (conductor 0.035x2mm)

_amb= 50°C

0.3

maximum average forward current

maximum pulsed source current

I²t value for fusing

I_FAVM

I_SM

I²t

0.2

t_p= 0.1 ms; non repetitive

t_p= 0.1 ms

_amb= 50°C

T_VJ= 125°C

0.125

A²s

forward voltage drop

V_T

I_T= 5 A

V_T0

r_T

17.5

Ω

threshold voltage

slope resistance

for power-loss calculation only

IXBOD1 - 20R... - 32R (3 Elements)

Symbol Deﬁnitions

Ratings

Conditions

min. typ. max.

breakover voltage

V_BO

V_BO(T_VJ) = V_{BO, 25°C}[1 + K_T(T_VJ- 25°C)]

IXBOD 1 -20R

1950 2000 2050

2050 2100 2150

2150 2200 2250

2250 2300 2350

2350 2400 2450

2450 2500 2550

2500 2600 2700

2700 2800 2900

2900 3000 3100

3100 3200 3300

IXBOD 1 -21R

IXBOD 1 -22R

IXBOD 1 -23R

IXBOD 1 -24R

IXBOD 1 -25R

IXBOD 1 -26R

IXBOD 1 -28R

IXBOD 1 -30R

IXBOD 1 -32R

RMS current

I_RMS

f = 50 Hz

pins soldered to printed circuit (conductor 0.035x2mm)

_amb= 50°C

1.4

maximum average forward current

maximum pulsed source current

I²t value for fusing

I_FAVM

I_SM

I²t

0.9

200

t_p= 0.1 ms; non repetitive

t_p= 0.1 ms

_amb= 50°C

T_VJ= 125°C

A²s

forward voltage drop

V_T

I_T= 5 A

5.1

V_T0

r_T

3.3

0.36

Ω

threshold voltage

slope resistance

for power-loss calculation only

IXYS reserves the right to change limits, test conditions and dimensions.

Data according ot IEC 60747 and per semiconductor unless otherwise speciﬁed

20210720a

3 - 7

1 234 5 6 7

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IXBOD1-18R	LITTELFUSE	Breakover Gen1系列提供各种电压范围的转折二极管，具有快速导通特性、低温度依赖	获取价格
IXBOD1-18RD	IXYS	RVS Blocking BOD, 1800V V(BO) Max,	获取价格
IXBOD1-18RD	LITTELFUSE	Breakover Gen1系列提供各种电压范围的转折二极管，具有快速导通特性、低温度依赖	获取价格
IXBOD1-19D	IXYS	Breakover Diode, 1950V V(BO) Max	获取价格