IXBOD1...R(D)
IXBOD1 several values
Symbol Definitions
Ratings
Conditions
min. typ. max.
drain current
ID
VD = 0.8·VBO
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
100
15
µA
breakover current
holding current
IBO
mA
mA
V
IH
30
holding voltage
VH
4
8
maximum pulsed source current
turn-off time
(di/dt)C
tq
VD = VBO; IT = 80 A; f = 50 Hz
200
A/µs
µs
VD = 0.67·VBO; VR = 0 V; IT = 80A
dv/dt(lin.) = 200 V/µs; di/dt = -10 A/µs
150
2·10-3
K-1
temperature coefficient of VBO
KT
KP
coefficient for energy per pulse EP
(material constant)
700 K/Ws
IXBOD1 - 12R... - 19R (2 Elements)
Symbol Definitions
Ratings
Conditions
min. typ. max.
breakover voltage
VBO
VBO (TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]
IXBOD 1 -12R
1150 1200 1250
1250 1300 1350
1350 1400 1450
1450 1500 1550
1550 1600 1650
1650 1700 1750
1750 1800 1850
1850 1900 1950
V
V
V
V
V
V
V
V
IXBOD 1 -13R
IXBOD 1 -14R
IXBOD 1 -15R
IXBOD 1 -16R
IXBOD 1 -17R
IXBOD 1 -18R
IXBOD 1 -19R
RMS current
IRMS
f = 50 Hz
pins soldered to printed circuit (conductor 0.035x2mm)
T
amb = 50°C
2.0
A
maximum average forward current
maximum pulsed source current
I2t value for fusing
IFAVM
ISM
I2t
1.25
200
2
A
A
tp = 0.1 ms; non repetitive
tp = 0.1 ms
T
amb = 50°C
amb = 50°C
TVJ = 125°C
T
A2s
V
forward voltage drop
VT
IT = 5 A
3.4
VT0
rT
2.2
0.24
V
Ω
threshold voltage
slope resistance
for power-loss calculation only
IXYS reserves the right to change limits, test conditions and dimensions.
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20210720a
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