Datasheet > IT121/71

IT121/71

更新时间： 2024-01-10 16:40:05

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	31K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 45V V(BR)CEO \| 50MA I(C) \| TO-71

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IT121/71 数据手册

PRODUCT SPECIFICATIONS

SEMICONDUCTOR TECHNOLOGY, INC.

3131 S. E. JAY STREET, STUART, FL 34997

PH: (561)283-4500 FAX: (561)286-8914

Website: http://www.semi -tech-inc.com

TYPE: IT121/71

CASE OUTLINE:

TO -71

NPN SILICON DUAL DIFFERENTIAL TRANSISTOR

ABSOLUTE MAXIMUM RATING:

Collector to Base

7.0

Vdc

CBO

Emitter to Base

EBO

Collector to Emitter

Collector Current

Vdc

CEO

mAdc

Watts

Power Dissipation T = 25 °C

0.5 (Both Sides)

-65 to +200

Power Dissipation T = 25 °C

Storage Temperature

°C

stg

Operating Temperature

Lead Temperature From Case

-65 to +200

ELECTRICAL CHARACTERISTICS TA @ 25 ° C

PARAMETERS

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector to Collector Voltage

Vdc

CCO

Emitter to Base Voltage

Collector to Emitter Voltage

Collector Cutoff Current

Emitter Cutoff Current

Vdc

EBO

I_C=1.0mA

CEO(sus)

CEO

V_CB=45V

1.0

CBO

V_CB=45V, T_A=150°C

CBO

CEX

V_EB=5.0V

1.0

EBO

D.C. Current Gain Pulsed*

Saturation Voltage*

100

I_C=10mA, V_CE=5.0V

I_C=1.0mA, V_CE=5.0V

I_C=10mA, V_CE=5.0V, T_A= -55°C

I_C=0.5mA, I_B=0.05mA

0.5

0.7

Vdc

CE(sat)

BE(sat)

Saturation Voltage*

Base Emitter Voltage*

I_C=10mA, V_CE=5.0V

BE(on)

Current Gain at F =

Emitter Transition Capacitance

Collector to Collector Capacitance

Collector to Collector Leakage Current

Output Capacitance

V_EB=0.5V

V_CC=0

2.5

4.0

C1-C2

V_CC= ±60V

C1-C2

V_CB=5.0V

2.0

Frequency Cutoff

Transition Frequency

f & b

MHz

180

I_C=10mA, V_CE=5.0V

I_C=1.0mA, V_CE=5.0V

Notes: *Pulse Width £300usec 2% Duty Cycle

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