〈SMALL-SIGNAL TRANSISTOR〉
ISB1035AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
ISB1035AS1 is a resin sealed silicon PNP epitaxial type
transistor. It is designed for low frequency power amplify
application. Complementary with ISD1447AS1.
4.0
FEATURE
0.1
●High collector current. ICM= 1.5A
●High gain band width product. fT= 100MHz typ
●High collecot dissipation. Pc= 600mW
●Excellent linearity of DC forward current gain.
0.45
2.5
2.5
APPLICATION
Radio, tape recorder, small type stereo, etc.
Low frequency power amplify circuit with 2 to 3.5W output.
① ② ③
JEITA:
JEDEC:
TERMINAL CONNECTER
①:EMITTER
MAXIMUM RATINGS(Ta=25℃)
.
②:COLLECTOR
③:BASE
Symbol
Parameter
Ratings
Unit
VCBO
VEBO
VCEO
IC
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
-30
-4
V
V
-25
V
-1
A
ICM
Peak collector current
Collector dissipation
-1.5
A
Pc
600
mW
℃
℃
Tj
Junction temperature
Storage temperature
+150
-55~+150
Tstg
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Parameter
Test conditions
Unit
Min
-30
-4
-25
-
Typ
-
Max
-
V(BR)CBO
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
IC= -10μA , IE =0mA
IE= -10μA , IC =0mA
IC= -100μA , RBE= ∞
V CB= -25V , I E= 0mA
V EB= -2V , I C= 0mA
V CE = -1V , IC= -500mA
I C= -500mA , I B= -25mA
V CE= -6V , I E= 10mA
V
V
V(BR)EBO
V(BR)CEO
ICBO
-
-
-
-
V
-
-1
-1
300
-0.5
-
μA
μA
-
IEBO
-
-
hFE※
VCE(sat)
fT
DC forward current gain
C to E Saturation Voltage
Gain band width product
55
-
-
-
V
-
100
MHz
※) It shows hFE classification in right table.
Item
C
D
E
hFE item
55~110
90~180
150~300
ISAHAYA ELECTRONICS CORPORATION