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ISB1035AS1 PDF预览

ISB1035AS1

更新时间: 2022-03-20 19:11:38
品牌 Logo 应用领域
谏早电子 - ISAHAYA /
页数 文件大小 规格书
3页 219K
描述
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

ISB1035AS1 数据手册

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〈SMALL-SIGNAL TRANSISTOR〉  
ISB1035AS1  
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION  
SILICON PNP EPITAXIAL TYPE  
DESCRIPTION  
OUTLINE DRAWING  
Unit:mm  
ISB1035AS1 is a resin sealed silicon PNP epitaxial type  
transistor. It is designed for low frequency power amplify  
application. Complementary with ISD1447AS1.  
4.0  
FEATURE  
0.1  
●High collector current. ICM= 1.5A  
●High gain band width product. fT= 100MHz typ  
●High collecot dissipation. Pc= 600mW  
●Excellent linearity of DC forward current gain.  
0.45  
2.5  
2.5  
APPLICATION  
Radio, tape recorder, small type stereo, etc.  
Low frequency power amplify circuit with 2 to 3.5W output.  
① ② ③  
JEITA:  
JEDEC:  
TERMINAL CONNECTER  
①:EMITTER  
MAXIMUM RATINGS(Ta=25℃)  
.
②:COLLECTOR  
③:BASE  
Symbol  
Parameter  
Ratings  
Unit  
VCBO  
VEBO  
VCEO  
IC  
Collector to Base voltage  
Emitter to Base voltage  
Collector to Emitter voltage  
Collector current  
-30  
-4  
V
V
-25  
V
-1  
A
ICM  
Peak collector current  
Collector dissipation  
-1.5  
A
Pc  
600  
mW  
Tj  
Junction temperature  
Storage temperature  
+150  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Parameter  
Parameter  
Test conditions  
Unit  
Min  
-30  
-4  
-25  
-
Typ  
-
Max  
-
V(BR)CBO  
C to B break down voltage  
E to B break down voltage  
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
IC= -10μA , IE =0mA  
IE= -10μA , IC =0mA  
IC= -100μA , RBE= ∞  
V CB= -25V , I E= 0mA  
V EB= -2V , I C= 0mA  
V CE = -1V , IC= -500mA  
I C= -500mA , I B= -25mA  
V CE= -6V , I E= 10mA  
V
V
V(BR)EBO  
V(BR)CEO  
ICBO  
-
-
-
-
V
-
-1  
-1  
300  
-0.5  
-
μA  
μA  
-
IEBO  
-
-
hFE※  
VCE(sat)  
fT  
DC forward current gain  
C to E Saturation Voltage  
Gain band width product  
55  
-
-
-
V
-
100  
MHz  
※) It shows hFE classification in right table.  
Item  
C
D
E
hFE item  
55~110  
90~180  
150~300  
ISAHAYA ELECTRONICS CORPORATION