Datasheet > IS93C56A-3PA

IS93C56A-3PA

更新时间： 2024-01-08 12:31:41

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	66K
描述
EEPROM

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IS93C56A-3PA 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	TSSOP
包装说明：	TSSOP, TSSOP8,.25	针数：	8
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.91
Is Samacsys：	N	备用内存宽度：	8
最大时钟频率 (fCLK)：	2 MHz	数据保留时间-最小值：	40
耐久性：	1000000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0	长度：	4.4 mm
内存密度：	2048 bit	内存集成电路类型：	EEPROM
内存宽度：	16	湿度敏感等级：	1
功能数量：	1	端子数量：	8
字数：	128 words	字数代码：	128
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128X16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	3/5 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
串行总线类型：	MICROWIRE	最大待机电流：	0.000002 A
子类别：	EEPROMs	最大压摆率：	0.001 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	2.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	3 mm
最长写入周期时间 (tWC)：	5 ms	写保护：	SOFTWARE
Base Number Matches：	1

IS93C56A-3PA 数据手册

IS93C46A

IS93C56A

IS93C66A

ISSI

Write Enable (WEN)

Write All (WRALL)

The write enable (WEN) instruction must be executed

before any device programming (WRITE, WRALL,

ERASE, and ERAL) can be done. When Vcc is applied,

this device powers up in the write disabled state. The

devicethenremainsinawritedisabledstateuntilaWEN

instruction is executed. Thereafter, the device remains

enabled until a WDS instruction is executed or until Vcc

is removed. (See Figure 4.) (Note: Chip select must

remain LOW until Vcc reaches its operational value.)

The write all (WRALL) instruction programs all registers

with the data pattern specified in the instruction. As with

the WRITE instruction, the falling edge of CS must occur

to initiate the self-timed programming cycle. If CS is then

brought HIGH after a minimum wait of 250 ns (tCS), the

DOUT pinindicatestheREADY/BUSYstatusofthechip(see

Figure6).

Write Disable (WDS)

The write disable (WDS) instruction disables all programming

capabilities. This protects the entire device against acci-

dental modification of data until a WEN instruction is

executed. (When Vcc is applied, this part powers up in the

write disabled state.) To protect data, a WDS instruction

should be executed upon completion of each programming

operation.

Write (WRITE)

TheWRITEinstructionincludes8or16bitsofdatatobe

written into the specified register. After the last data bit

has been applied to DIN, and before the next rising edge

of SK, CS must be brought LOW. The falling edge of CS

initiates the self-timed programming cycle.

If CS is brought HIGH, after a minimum wait of 250 ns

(5V operation) after the falling edge of CS (t^CS) DOUT will

indicate the READY/BUSY status of the chip. Logical

“0” means programming is still in progress, logical “1”

means the selected register has been written, and the

part is ready for another instruction (see Figure 5).

(NOTE: The combination of CS HIGH, DIN HIGH and

the rising edge of the SK clock, resets the READY/

BUSY flag. Therefore, to access the READY/BUSY

flag, this combination of control signals should be

avoided.) Before a WRITE instruction can be executed,

the device must be write enabled (see WEN).

Erase Register (ERASE)

After the erase instruction is entered, CS must be brought

LOW.ThefallingedgeofCSinitiatestheself-timedinternal

programming cycle. Bringing CS HIGH after a minimum of

tCS, will cause DOUT to indicate the READ/BUSY status of the

chip:alogical“0”indicatesprogrammingisstillinprogress;

a logical “1” indicates the erase cycle is complete and the

part is ready for another instruction (see Figure 8).

Erase All (ERAL)

Fullchiperaseisprovidedforeaseofprogramming.Erasing

the entire chip involves setting all bits in the entire memory

array to a logical “1” (see Figure 9).

INSTRUCTION SET - IS93C46A

8-bitOrganization

16-bitOrganization

(ORG = GND)

(ORG = Vcc)

(1)

Instruction

READ

Start Bit

OP Code

Address

Input Data

Address

Input Data

(A6-A0)

11xxxxx

(A6-A0)

01xxxxx

00xxxxx

(A6-A0)

10xxxxx

—

(A5-A0)

11xxxx

(A5-A0)

01xxxx

00xxxx

(A5-A0)

10xxxx

—

WEN (Write Enable)

WRITE

(3)

(2)

(D7-D0)

(D15-D0)

(3)

(2)

WRALL (Write All Registers)

WDS (Write Disable)

ERASE

(D7-D0)

(D15-D0)

—

ERAL (Erase All Registers)

Notes:

1. x = Don't care bit.

2. If input data is not 16 bits exactly, the last 16 bits will be taken as input data.

3. If input data is not 8 bits exactly, the last 8 bits will be taken as input data.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

11/12/02

1 234 5 6 7...13

下载PDF

与IS93C56A-3PA相关器件

型号	品牌	描述	获取价格	数据表
IS93C56A-3PI	ISSI	2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM	获取价格
IS93C56A-3PLA3	ISSI	2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM	获取价格
IS93C56A-3PLI	ISSI	EEPROM, 128X16, Serial, CMOS, PDIP8, 0.300 INCH, LEAD FREE, PLASTIC, DIP-8	获取价格
IS93C56A-3ZI	ETC	EEPROM	获取价格
IS93C56A-3ZLA3	ISSI	2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM	获取价格
IS93C56A-5GRA	ISSI	EEPROM	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

IS93C56A-3PA

IS93C56A-3PA 技术参数

IS93C56A-3PA 数据手册

与IS93C56A-3PA相关器件

与IS93C56A-3PA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS93C56A-3PA

IS93C56A-3PA 技术参数

IS93C56A-3PA 数据手册

与IS93C56A-3PA相关器件

与IS93C56A-3PA相关文章

您还可以找

您在本页遇到什么问题？