Data Sheet No. PD65000
IR2136C/IR21362C/IR21363C/IR21365C/
IR21366C/IR21367C/IR21368C
3-PHASE BRIDGE DRIVER DIE IN WAFER FORM
Features
c
100 % Tested at Probe
•
d
Available in Chip Pack, Unsawn Wafer, Sawn on Film
Floating channel designed for bootstrap operation
Fully operational to +600V
•
•
Tolerant to negative transient voltage - dV/dt immune
Gate drive supply range from 10 to 20V (IR2136C/IR21368C), 11.5 to 20V (IR21362C) or 12 to 20V
(IR21363C/IR21365C/IR21366C/IR21367C)
•
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
•
•
•
•
•
•
Cross-conduction prevention logic
Lowside outputs out of phase with inputs. High side outputs out of phase (IR2136C/IR21363C/IR21365C/
IR21366C/IR21367C/IR21368C) or in phase (IR21362C) with inputs.
3.3V logic compatible
Lower di/dt gate driver for better noise immunity
Externally programmabledelay for automatic fault clear
•
•
•
up to 600V
Typical Connection
VCC
HIN1,2,3 / HIN1,2,3
LIN1,2,3
VCC
HIN1,2,3
LIN1,2,3
FAULT
EN
/
HIN1,2,3
VB1,2,3
HO1,2,3
VS1,2,3
FAULT
EN
(Refer to the Die Outlines
TO
LOAD
for correct pin configura-
RCIN
ITRIP
VSS
tion).
This/These
LO1,2,3
COM
diagram(s) show electri-
cal connections only.
Please refer to our Appli-
cation
Notes
and
DesignTips for proper cir-
cuit board layout.
IR2136(2)(3)(5)(6)(7)(8)
GND
Note:
c This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized
processes. Due to restrictions in die level processing, die may not be equivalent to standard package products and are
therefore offered with a conditional performance guarantee. The above data sheet is based on IR sample testing under
certain predetermined and assumed conditions, and are provided for illustration purposes only. Customers are encouraged
to perform testing in actual proposed packaged and use conditions. IR die products are tested using IR-based quality
assurance procedures and are manufactured using IR’s established processes. Programs for customer-specified testing
are available upon request. IR has experienced assembly yields of generally 95% or greater for individual die; however,
customer’s results will vary. Estimates such as those described and set forth in this data sheet for semiconductor die will
vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent
basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable
standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale,
which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be
carried out or product can be purchased as known good die.
d Part number shown is for die in wafer. Contact factory for these other options.
www.irf.com
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