Datasheet > IPT0408-18F

IPT0408-18F

更新时间： 2022-03-19 13:14:01

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
4页	432K
描述
High current density due to double mesa technology

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IPT0408-18F 数据手册

IPT0408-xxF

ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

Rating

TYP

Symbol

Test Condition

Quadrant

Unit

MIN

MAX

IGT

T2+G+/T2+G-/T2-G-

18-25

VD = 12V RL = 30Ω

VGT

1.5

VD=VDRM, RL=3.3KΩ,

Tj = 125 ℃

VGD

0.2

T2+ G+

T2+ G-

IG = 1.2 IGT

IT = 100mA

T2- G-

T2+G+/T2+G-/T2-G-

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

500

V/us

STATIC CHARACTERISTICS

Symbol

IDRM

Test Conditions

Value (MAX)

Unit

VD = VDRM

VR = VRRM

Tj = 25 ℃

IRRM

Tj = 125 ℃

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j – c)

Junction to case (AC)

3.5

℃/W

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IPT0408-35B	IPS	High current density due to double mesa technology	获取价格
IPT0408-35D	IPS	High current density due to double mesa technology	获取价格
IPT0408-35I	IPS	High current density due to double mesa technology	获取价格
IPT0408-50F	IPS	High current density due to double mesa technology	获取价格