Datasheet > IPT0406-35D

IPT0406-35D

更新时间： 2022-03-04 01:32:14

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
5页	226K
描述
High current density due to double mesa technology

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IPT0406-35D 数据手册

IPT0406-xxD

ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

IPT0406-xxD

Symbol

Test Condition

Quadrant

Unit

IGT

I – II – III

MAX

VD = 12V RL = 33Ω

VGT

1.3

VD=VDRM, RL=3.3KΩ,

Tj = 125 ℃

VGD

I – II – III

MIN

0.2

I – III

1.8

0.9

2.7

2.0

400

IG = 1.2 IGT

IT = 500mA

MAX

MIN

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

(dV/dt) c=0.1V/us Tj = 125 ℃

(dV/dt) c=10V/us Tj = 125 ℃

Without snubber Tj = 125 ℃

V/us

(dI/dt)c

MIN

A/ms

2.5

STATIC CHARACTERISTICS

Symbol

VTM

Test Conditions

Value (MAX)

Unit

ITM = 5.5A, t p = 380uS

Tj = 25 ℃

Tj = 125 ℃

1.6

IDRM

VD = VDRM

VR = VRRM

IRRM

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j – c)

Junction to case (AC)

2.6

℃/W

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与IPT0406-35D相关器件

型号	品牌	描述	获取价格	数据表
IPT0406-35I	IPS	High current density due to double mesa technology	获取价格
IPT0406-50F	IPS	High current density due to double mesa technology	获取价格
IPT0408-05A	IPS	High current density due to double mesa technology	获取价格
IPT0408-05B	IPS	High current density due to double mesa technology	获取价格
IPT0408-05D	IPS	High current density due to double mesa technology	获取价格
IPT0408-05I	IPS	High current density due to double mesa technology	获取价格