Datasheet > IMBG120R045M1H

IMBG120R045M1H

更新时间： 2023-09-03 20:33:59

品牌	Logo	应用领域
英飞凌 - INFINEON		电机驱动
页数	文件大小	规格书
17页	1256K
描述
是采用D2PAK-7L (TO-263-7)封装的1200 V, 45 mΩ CoolSiC™ SiC MOSFET，它基于先进的沟槽工艺，该工艺经过优化，兼具性能与可靠性。它采用改良版1200V SMD封装，将CoolSiC技术的低功耗特性与.XT互联技术相结合，可在电机驱动、充电模块以及工业电源等应用中实现最高效率和被动制冷。

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IMBG120R045M1H 数据手册

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All referenced product or service names and trademarks are the property of their respective owners.

Published by

Infineon Technologies AG

81726 München, Germany

Important notice

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive

Electronics Council.

Warnings

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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与IMBG120R045M1H相关器件

型号	品牌	获取价格	描述	数据表
IMBG120R053M2H	INFINEON	获取价格	这款第二代1200 V、53 mΩ?CoolSiC? MOSFET采用D2PAK-7L（T
IMBG120R060M1H	INFINEON	获取价格	是采用D2PAK-7L (TO-263-7)封装的1200 V, 60?mΩ?CoolSi
IMBG120R078M2H	INFINEON	获取价格	这款第二代1200 V、78 mΩ?CoolSiC? MOSFET采用D2PAK-7L（T
IMBG120R090M1H	INFINEON	获取价格	是采用D2PAK-7L (TO-263-7)封装的1200 V, 90 mΩ CoolSi
IMBG120R116M2H	INFINEON	获取价格	这款第二代1200 V、116 mΩ?CoolSiC? MOSFET采用D2PAK-7L（
IMBG120R140M1H	INFINEON	获取价格	是采用D2PAK-7L (TO-263-7)封装的1200 V, 140 mΩ CoolS
IMBG120R181M2H	INFINEON	获取价格	这款第二代1200 V、181 mΩ?CoolSiC? MOSFET采用D2PAK-7L（
IMBG120R220M1H	INFINEON	获取价格	是采用D2PAK-7L (TO-263-7)封装的1200 V, 220 mΩ CoolS
IMBG120R234M2H	INFINEON	获取价格	这款第二代1200 V、234 mΩ?CoolSiC? MOSFET采用D2PAK-7L（
IMBG120R350M1H	INFINEON	获取价格	是采用D2PAK-7L (TO-263-7)封装的1200 V, 350 mΩ CoolS

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