IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
• FEATURES
Dimensions in inches (mm)
• High Current Transfer Ratio, I =1 mA
F
IL215A—20% Minimum
IL216A—50% Minimum
IL217A—100% Minimum
.120±.005
(3.05±.13)
.240
(6.10)
Anode
8
7
6
5
1
2
3
4
NC
.154±.005 Cathode
Base
C
L
(3.91±.13)
.016 (.41)
.015±.002
NC
NC
Collector
Emitter
• Isolation Voltage, 2500 VAC
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
RMS
Pin One ID
7°
.058±.005
(1.49±.13)
40°
.192±.005
(4.88±.13)
(.38±.05)
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
.004 (.10)
.008 (.20)
.125±.005
(3.18±.13)
.008 (.20)
5° max.
Lead
R.010
(.25) max.
.050 (1.27)
typ.
Coplanarity
±.0015 (.04)
max.
.020±.004
(.15±.10)
2 plcs.
.021 (.53)
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
Characteristics (T =25°C)
A
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
Symbol
Min.
Typ.
Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
V
1.0
0.1
25
1.5
V
I =1 mA
F
F
I
100
µA
pF
V =6.0 V
R
R
C
V =0
R
O
Breakdown Voltage
Collector-Emitter
Emitter-Collector
B
B
30
7
V
V
I =10 µA
C
VCEO
VECO
I =10 µA
E
Dark Current,
Collector-Emitter
I
5
50
nA
V =10 V
CE
CEOdark
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
I =0
F
Capacitance,
Collector-Emitter
C
10
pF
V =0
CE
CE
Maximum Ratings
Package
Emitter
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
CTR
%
I =10 mA,
F
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
DC
V
=5 V
CE
20
50
100
50
80
130
Detector
Saturation Voltage,
Collector-Emitter
V
0.5
I =1 mA,
CEsat
F
I =0.1 mA
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
C
Isolation Test Voltage
V
2500
VAC
pF
IO
RMS
Capacitance,
Input to Output
C
0.5
IO
Resistance,
Input to Output
Package
R
t
100
3.0
GΩ
µs
IO
Total Package Dissipation at 25°C Ambient
(LED + Detector).....................................280 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature .................. –55°C to +150°C
Operating Temperature .............. –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Switching Time
,t
I =2 mA,
on off
C
R =100 Ω,
E
V
=10 V
CE
5–1
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