Datasheet > IL202-1

IL202-1

更新时间： 2024-02-27 13:06:33

品牌	Logo	应用领域
其他 - ETC		光电输出元件输入元件
页数	文件大小	规格书
3页	393K
描述
NPN-OUTPUT DC-INPUT OPTOCOUPLER

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中文翻译

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技术参数
数据手册

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IL202-1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.92
当前传输比率-最小值：	30%	最大正向电流：	0.06 A
最大正向电压：	1.5 V	最大绝缘电压：	5300 V
JESD-609代码：	e0	安装特点：	THROUGH HOLE MOUNT
元件数量：	1	最高工作温度：	100 °C
最低工作温度：	-55 °C	最大功率耗散：	0.2 W
子类别：	Optocoupler - Transistor Outputs	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

IL202-1 数据手册

IL201/IL202/IL203

Phototransistor

Optocoupler

FEATURES

Dimensions in inches (mm)

• High Current Transfer Ratio, 75% to 450%

• Minimum Current Transfer Ratio, 10%

pin one ID

Anode

Cathode

Base

• Guaranteed at I =1.0mA

.248 (6.30)

.256 (6.50)

• High Collector-Emitter Voltage, BV

• Long Term Stability

=70V

CEO

Collector

Emitter

• Industry Standard DIP Package

• Underwriters Lab File #E52744

.335 (8.50)

.343 (8.70)

V_E

•

VDE 0884 Available with Option 1

.300 (7.62)

typ.

.048 (0.45)

.022 (0.55)

.039

(1.00)

Min.

DESCRIPTION

The IL201/202/203 are optically coupled pairs

employing a Gallium Arsenide infrared LED and a

Silicon NPN phototransistor. Signal information,

including a DC level, can be transmitted by the

device while maintaining a high degree of electri-

cal isolation between input and output. The

IL201/202/203 can be used to replace relays and

transformers in many digital interface applica-

tions, as well as analog applications such as CRT

modulation.

.130 (3.30)

.150 (3.81)

18°

4°

.114 (2.90)

.130 (3.0)

typ.

.031 (0.80) min.

3°–9°

.010 (.25)

typ.

.300–.347

.031 (0.80)

.035 (0.90)

.018 (0.45)

.022 (0.55)

.100 (2.54) typ.

(7.62–8.81)

Characteristics 0°C to 70°C unless otherwise speciﬁed

Parameter

Symbol Min. Typ. Max. Unit Condition

Maximum Ratings

Emitter

Peak Reverse Voltage .................................. 6.0 V

Continuous Forward Current ...................... 60 mA

Power Dissipation at 25°C....................... 100 mW

Derate Linearly from 25°C................. 1.33mW/°C

Detector

Emitter

Forward Voltage

Breakdown Voltage

Reverse Current

—

6.0

—

1.2

1.0

1.5

1.2

—

I =20 mA

I =1.0 mA

I =10 µA

0.1

µA

V =6.0 V

T =25°C

Collector-Emitter Breakdown Voltage,

Detector

........................................................ 70 V

CEO

Transistor Gain

HFE

100

200

—

=5.0 V

Emitter-Collector Breakdown Voltage,

BV ....................................................... 7.0 V

I =100 µA

ECO

Breakdown Voltage

Collector-Emitter

I =100 µA

Collector-Base Breakdown Voltage,

BV ....................................................... 70 V

CEO

ECO

CBO

Breakdown Voltage

Emitter-Collector

7.0

I =100 µA

Power Dissipation.................................... 200 mW

Derate Linearly from 25°C................... 2.6mW/°C

Package

Isolation Test Voltage (t=1.0 sec.) ...... 5300 V

Total Package Dissipation at 25°C A

(LED + Detector).................................. 250 mW

Derate Linearly from 25°C................... 3.3mW/°C

Creepage ............................................... ≥7.0 min

Clearance............................................... ≥7.0 min

Storage Temperature ................ –55°C to +150°C

Operating Temperature ............ –55°C to +100°C

Lead Soldering Time at 260°C..................10 sec.

Breakdown Voltage

Collector-Base

I =10 µA

RMS

Leakage Current

Collector-Emitter

—

5.0

=10 V,

CEO

T =25°C

Package

Base Current Transfer

Ratio

CTRCB 0.15

—

I =10 mA

=10 V

—

0.4

I =10 mA

CEsat

I =2.0 mA

DC Current Transfer Ratio CTR

I =10 mA,

IL201

IL202

IL203

125

225

100

200

300

150

250

450

=10 V

DC Current Transfer Ratio CTR

—

I =1.0 mA,

IL201

IL202

IL203

=10 V

 2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–104

March 1, 2000-00

12 3

中文翻译

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