IL201/IL202/IL203
Phototransistor
Optocoupler
FEATURES
Dimensions in inches (mm)
• High Current Transfer Ratio, 75% to 450%
• Minimum Current Transfer Ratio, 10%
pin one ID
2
1
3
6
5
4
Anode
Cathode
NC
Base
1
2
3
• Guaranteed at I =1.0mA
F
.248 (6.30)
.256 (6.50)
• High Collector-Emitter Voltage, BV
• Long Term Stability
=70V
CEO
Collector
Emitter
• Industry Standard DIP Package
• Underwriters Lab File #E52744
4
5
6
.335 (8.50)
.343 (8.70)
VE
D
•
VDE 0884 Available with Option 1
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
DESCRIPTION
The IL201/202/203 are optically coupled pairs
employing a Gallium Arsenide infrared LED and a
Silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electri-
cal isolation between input and output. The
IL201/202/203 can be used to replace relays and
transformers in many digital interface applica-
tions, as well as analog applications such as CRT
modulation.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.300–.347
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
(7.62–8.81)
Characteristics 0°C to 70°C unless otherwise specified
Parameter
Symbol Min. Typ. Max. Unit Condition
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25°C....................... 100 mW
Derate Linearly from 25°C................. 1.33mW/°C
Detector
Emitter
Forward Voltage
Forward Voltage
Breakdown Voltage
Reverse Current
V
I
—
—
6.0
—
1.2
1.0
20
1.5
1.2
—
V
I =20 mA
F
F
I =1.0 mA
F
I =10 µA
R
0.1
10
µA
V =6.0 V
R
R
T =25°C
A
Collector-Emitter Breakdown Voltage,
Detector
BV
........................................................ 70 V
CEO
Transistor Gain
HFE
100
70
200
—
—
—
—
—
50
—
V
V
=5.0 V
CE
Emitter-Collector Breakdown Voltage,
BV ....................................................... 7.0 V
I =100 µA
C
ECO
Breakdown Voltage
Collector-Emitter
BV
BV
BV
I =100 µA
Collector-Base Breakdown Voltage,
BV ....................................................... 70 V
CEO
ECO
CBO
C
CBO
Breakdown Voltage
Emitter-Collector
7.0
70
10
I =100 µA
Power Dissipation.................................... 200 mW
Derate Linearly from 25°C................... 2.6mW/°C
Package
Isolation Test Voltage (t=1.0 sec.) ...... 5300 V
Total Package Dissipation at 25°C A
(LED + Detector).................................. 250 mW
Derate Linearly from 25°C................... 3.3mW/°C
Creepage ............................................... ≥7.0 min
Clearance............................................... ≥7.0 min
Storage Temperature ................ –55°C to +150°C
Operating Temperature ............ –55°C to +100°C
Lead Soldering Time at 260°C..................10 sec.
E
Breakdown Voltage
Collector-Base
90
I =10 µA
C
RMS
Leakage Current
Collector-Emitter
I
—
5.0
nA
V
=10 V,
CE
CEO
T =25°C
A
Package
Base Current Transfer
Ratio
CTRCB 0.15
—
—
—
%
V
I =10 mA
F
CB
V
=10 V
V
—
0.4
I =10 mA
F
CEsat
I =2.0 mA
C
DC Current Transfer Ratio CTR
%
I =10 mA,
F
CE
IL201
IL202
IL203
75
125
225
100
200
300
150
250
450
V
=10 V
DC Current Transfer Ratio CTR
—
—
%
I =1.0 mA,
F
CE
IL201
IL202
IL203
10
30
50
V
=10 V
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–104
March 1, 2000-00