生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 28 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.76 |
最长访问时间: | 100 ns | JESD-30 代码: | R-GDIP-T28 |
内存密度: | 262144 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 28 | 字数: | 32768 words |
字数代码: | 32000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 32KX8 | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 5.89 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IL1I-65656V-85 | TEMIC |
获取价格 |
Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, | |
IL1I-65664L-70 | TEMIC |
获取价格 |
Standard SRAM, 8KX8, 70ns, CMOS, CDIP28, | |
IL1I-65664L-75 | TEMIC |
获取价格 |
Standard SRAM, 8KX8, 75ns, CMOS, CDIP28, | |
IL1I-65664L-85 | TEMIC |
获取价格 |
Standard SRAM, 8KX8, 85ns, CMOS, CDIP28, | |
IL1I-65664V-75 | TEMIC |
获取价格 |
Standard SRAM, 8KX8, 75ns, CMOS, CDIP28, | |
IL1I-67203L-55 | ATMEL |
获取价格 |
FIFO, 2KX9, 55ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | |
IL1I-67203L-60 | ATMEL |
获取价格 |
FIFO, 2KX9, 60ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | |
IL1I-67203V-65 | ATMEL |
获取价格 |
FIFO, 2KX9, 65ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | |
IL1I-67204L-55 | ATMEL |
获取价格 |
FIFO, 4KX9, 55ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 | |
IL1I-67205V-60 | TEMIC |
获取价格 |
FIFO, 8KX9, 60ns, Asynchronous, CMOS, CDIP28, 0.600 INCH, CERAMIC, DIP-28 |