Datasheet > IKQ150N65EH7

IKQ150N65EH7

更新时间： 2024-03-03 10:10:07

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
17页	2045K
描述
Hard-switching 650 V, 150 A?TRENCHSTOP? IGBT7?H7?discrete?in TO247PLUS-3 package has been developed to fulfill the demand in green & efficient energy applications, while also offering significant improvements over its predecessor generations.

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IKQ150N65EH7 数据手册

IKQ150N65EH7

™

High speed and low saturation voltage 650 V TRENCHSTOP IGBT7 technology

3 Diode

Table 5

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Diode peak rate of fall of

reverse recovery current

di_rr/dt V_R= 400 V, R_G(on)= 10 Ω T_vj= 25 °C,

I_F= 150 A

-2240

A/µs

T_vj= 175 °C,

I_F= 150 A

-2260

0.46

Reverse recovery energy

E_rec

V_R= 400 V, R_G(on)= 10 Ω T_vj= 25 °C,

I_F= 150 A

°C

T_vj= 175 °C,

I_F= 150 A

1.45

Operating junction

temperature

T_vj

-40

175

Note:

For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of

the maximum ratings stated in this datasheet.

Electrical Characteristic at T_vj= 25°C, unless otherwise specified.

Dynamic test circuit, parasitic inductance L_σ= 8 nH, parasitic capacitor C_σ= 30 pF from Fig. E. Energy losses

include “tail” and diode reverse recovery.

Datasheet

Revision 1.10

2023-04-25

1...3 4 567 8 9...17

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