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ICTE5HE3_A/C PDF预览

ICTE5HE3_A/C

更新时间: 2024-02-18 00:07:41
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 102K
描述
Trans Voltage Suppressor Diode,

ICTE5HE3_A/C 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:9 weeks
风险等级:5.76二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3峰值回流温度(摄氏度):NOT APPLICABLE
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

ICTE5HE3_A/C 数据手册

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ICTE5 thru ICTE18C, 1N6373 thru 1N6386  
www.vishay.com  
Vishay General Semiconductor  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
Case Style 1.5KE  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.0 V to 18 V  
6.0 V to 21.2 V  
9.2 V to 21.2 V  
1500 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
VBR (uni-directional)  
V
BR (bi-directional)  
PPPM  
MECHANICAL DATA  
PD  
6.5 W  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
IFSM  
200 A  
TJ max.  
Polarity  
Package  
175 °C  
Uni-directional, bi-directional  
1.5KE  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
DEVICES FOR BI-DIRECTION APPLICATIONS  
meets JESD 201 class 2 whisker test  
For bi-directional types, use C suffix (e.g. ICTE18C).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 100 A for uni-directional only  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
-55 to +175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 16-Jan-18  
Document Number: 88356  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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