IC41C16100S-45KG

更新时间： 2024-02-05 03:44:56

品牌	Logo	应用领域
矽成 - ICSI		/
页数	文件大小	规格书
21页	673K
描述
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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IC41C16100S-45KG 数据手册

IC41C16100S

IC41LV16100S

ABSOLUTE MAXIMUM RATINGS⁽¹⁾

Symbol Parameters

Rating

Unit

V^T

Voltage on Any Pin Relative to GND

–1.0 to +7.0

3.3V

–0.5 to +4.6

V^CC

Supply Voltage

–1.0 to +7.0

–0.5 to +4.6

3.3V

IOUT

Output Current

Power Dissipation

Commercial Operation Temperature

0 to +70

°C

Industrial Operationg Temperature

–40 to +85

°C

TSTG

Storage Temperature

–55 to +125

°C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)

Symbol

Parameter

Min.

Typ.

Max.

Unit

VCC

Supply Voltage

4.5

5.0

5.5

3.3V

3.0

3.3

3.6

VIH

V^IL

Input High Voltage

Input Low Voltage

2.4

2.0

—

VCC + 1.0

VCC + 0.3

3.3V

–1.0

—

0.8

3.3V

–0.3

—

0.8

Commercial Ambient Temperature

Industrial Ambient Temperature

—

°C

–40

CAPACITANCE^(1,2)

Symbol

Parameter

Input Capacitance: A0-A9

Max.

Unit

CIN1

CIN2

CIO

Input Capacitance: RAS, UCAS, LCAS, WE, OE

Data Input/Output Capacitance: I/O0-I/O15

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz.

Integrated Circuit Solution Inc.

DR010-0D 11/26/2004

1...3 4 567 8 9...21

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