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IBM01164B0T3-70 PDF预览

IBM01164B0T3-70

更新时间: 2024-09-25 20:28:15
品牌 Logo 应用领域
国际商业机器公司 - IBM 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
25页 253K
描述
Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO32, 0.400 X 0.825 INCH, 2 HIGH STACK, TSOJ-32

IBM01164B0T3-70 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:ASOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92Is Samacsys:N
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-J32JESD-609代码:e0
长度:20.95 mm内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:32字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:ASOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, PIGGYBACK峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
刷新周期:4096座面最大高度:3.2 mm
最大待机电流:0.001 A子类别:DRAMs
最大压摆率:0.065 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

IBM01164B0T3-70 数据手册

 浏览型号IBM01164B0T3-70的Datasheet PDF文件第2页浏览型号IBM01164B0T3-70的Datasheet PDF文件第3页浏览型号IBM01164B0T3-70的Datasheet PDF文件第4页浏览型号IBM01164B0T3-70的Datasheet PDF文件第5页浏览型号IBM01164B0T3-70的Datasheet PDF文件第6页浏览型号IBM01164B0T3-70的Datasheet PDF文件第7页 
IBM0116400M 4M  
x 412/10, 5.0V, LP, SR. IBM0116400P 4M x 412/10, 3.3V, LP, SR.  
IBM01164B0  
IBM01164D0  
4M x 4 Stacked DRAM  
Features  
• 4,194,304 word by 4 bit organization by 2 High  
• 4,194,304 word by 4 bit organization by 4 High  
• Single 3.3V or 5.0V power supply  
• 4096 refresh cycles 64ms  
• Low Power Dissipation (per deck)  
- Active (max) - 85mA/75mA  
- Standby (TTL Inputs) - 1.0mA (max)  
- Standby (CMOS Inputs) - 1.0mA (max)  
• Fast Page Mode  
• Read-Modify-Write  
• High Performance:  
• CAS before RAS Refresh  
• RAS only Refresh  
-60  
-70  
tRAC  
tCAC  
RAS Access Time  
CAS Access Time  
60ns  
15ns  
70ns  
20ns  
• Hidden Refresh  
• Package: TSOJ-32 (400mil x 825mil)  
Column Address  
Access Time  
tAA  
tRC  
tPC  
30ns  
110ns  
40ns  
35ns  
130ns  
45ns  
Cycle Time  
Fast Page Mode Cycle  
Time  
Description  
mance, low power dissipation, and high reliability.  
The devices operate with a single 3.3V or 5.0V  
power supply. The 22 addresses required to access  
any bit of data are multiplexed (12 are strobed with  
RAS, 10 are strobed with CAS). The 2 High requires  
2 RAS pins and the 4 High requires 4 RAS pins.  
The IBM01164B0 and IBM01164D0 are dynamic  
RAMS organized 4,194,304 words by 4 bits in 2 high  
or 4 high stacks, respectively. These devices are  
fabricated in IBM’s advanced 0.5µm CMOS silicon  
gate process technology. The circuit and process  
have been carefully designed to provide high perfor-  
Pin Assignments (Top View)  
Pin Description  
RAS0-RAS1  
RAS0-RAS3  
CAS  
Row Address Strobe- 2 High  
Row Address Strobe- 4 High  
Column Address Strobe  
Read/Write Input  
Vcc  
I/O0  
I/O1  
WE  
RAS0  
RAS1  
Vss  
I/O3  
I/O2  
NC  
NC  
NC  
1
2
3
4
5
6
32  
31  
30  
29  
28  
27  
WE  
A0 - A11  
OE  
Address Inputs  
Output Enable  
RAS2  
NC  
RAS3  
A11  
A10  
A0  
CAS  
OE  
NC  
A9  
A8  
A7  
7
8
26  
25  
24  
23  
22  
21  
20  
19  
I/O0 - I/O3  
VCC  
Data Input/Output  
Power (+3.3V or +5.0V)  
Ground  
9
VSS  
10  
11  
12  
13  
14  
A1  
A2  
A6  
A5  
15  
16  
A3  
Vcc  
18  
17  
A4  
Vss  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
28H4727  
GA14-4248-01  
Revised 11/96  
Page 1 of 24  

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