Datasheet > HZS9LB1

HZS9LB1

更新时间： 2024-02-22 07:41:28

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管齐纳二极管
页数	文件大小	规格书
7页	74K
描述
Silicon Epitaxial Planar Zener Diode for Low Noise Application

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HZS9LB1 技术参数

HZS-L Series

Silicon Epitaxial Planar Zener Diode for

Low Noise Application

REJ03G0166-0200Z

(Previous: ADE-208-121A)

Rev.2.00

Jan.06.2004

Features

•

Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

stabilized power supply, etc.

•

Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-L Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.2.00, Jan.06.2003, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS9LB2	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS9LB2	SWST	获取价格	稳压二极管
HZS9LB3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS9LB3	SWST	获取价格	稳压二极管
HZS9LC1	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS9LC1	SWST	获取价格	稳压二极管
HZS9LC2	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS9LC2	SWST	获取价格	稳压二极管
HZS9LC3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Low Noise Application
HZS9LC3	SWST	获取价格	稳压二极管