HZS8.2NB2TDX

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HZS8.2NB2TDX 数据手册

HZS-N Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

REJ03G0185-0100Z

(Previous: ADE-208-124)

Rev.1.00

Mar.11.2004

Features

•

Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

power supply, etc.

•

Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.

Suitable for 5mm-pitch high speed automatic insertion.

Ordering Information

Type No.

Mark

Package Code

HZS-N Series

Type No.

MHD

Pin Arrangement

Type No.

Cathode band

1. Cathode

2. Anode

Rev.1.00, Mar.11.2004, page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
HZS8.2NB2TE	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS8.2NB3	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS8.2NB3	HITACHI	获取价格	Zener Diode, 8.24V V(Z), 2.06%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN
HZS8.2NB3TA	RENESAS	获取价格	暂无描述
HZS8.2NB3TD	RENESAS	获取价格	暂无描述
HZS8.2NB3TD-E	RENESAS	获取价格	HZS8.2NB3TD-E
HZS8.2NB3TE	RENESAS	获取价格	0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, D0-34, DO-34, 2 PIN
HZS8.2NB4	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS9	RENESAS	获取价格	Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS9.1N	RENESAS	获取价格	VOLTAGE REGULATOR DIODE