Datasheet > HZS2B1

HZS2B1

更新时间： 2024-09-27 05:38:51

品牌	Logo	应用领域
商升特 - SEMTECH		二极管齐纳二极管局域网
页数	文件大小	规格书
4页	262K
描述
SILICON EPITAXIAL PLANER ZENER DIODES

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中文翻译

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数据手册

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HZS2B1 数据手册

HZS Series

SILICON EPITAXIAL PLANER ZENER DIODES

for Stabilized Power Supply

Max. 0.45

Features

Min. 27.5

Max. 2.9

Min. 27.5

Max. 1.9

• Low leakage, low zener impedance and maximum

power dissipation of 400 mW are ideally suited for

stabilized power supply, etc.

Black

Cathode Band

Black

Part No.

XXX

• Wide spectrum from 1.6 V through 38 V of zener

voltage provide flexible application.

Glass Case DO-34

Dimensions in mm

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

P_tot

Value

Unit

Power Dissipation

400

200

Junction Temperature

T_j

Storage Temperature Range

T_S

- 55 to + 175

Characteristics at T_a= 25 C

Zener Voltage ¹⁾

Reverse Current

I_R(µA)

Dynamic Resistance

Type

V_Z(V)

Max.

r_d(Ω)

Min.

I_Z(mA)

Max.

V_R(V)

Max.

100

l_Z(mA)

HZS2A1

1.6

1.7

1.8

1.9

1.8

1.9

0.5

HZS2A2

HZS2A3

HZS2B1

HZS2B2

HZS2B3

HZS2C1

HZS2C2

HZS2C3

HZS3A1

HZS3A2

HZS3A3

HZS3B1

HZS3B2

HZS3B3

HZS3C1

HZS3C2

HZS3C3

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

0.5

100

0.5

100

3.1

3.2

3.3

3.4

3.5

3.1

3.2

3.3

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 25/06/2007

12 3 4

中文翻译

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