Datasheet > HYM7V63801BTFG-75

HYM7V63801BTFG-75

更新时间： 2025-09-06 23:57:27

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
13页	170K
描述
x64 SDRAM Module

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中文翻译

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8Mx64 bits

PC133 SDRAM Unbuffered DIMM

based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM7V63801B F-Series

DESCRIPTION

The Hynix HYM7V63801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight

8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package

on a 168pin glass-epoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are

mounted on the PCB.

The HYM7V63801B F-Series are Dual In-line Memory Modules suitable for easy interchange and addition of 64Mbytes

memory. The HYM7V63801B F-Series are offering fully synchronous operation referenced to a positive edge of the

clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally

pipelined to achieve very high bandwidth.

FEATURES

· PC133/100MHz support

· SDRAM internal banks : four banks

· Module bank : one physical bank

· Auto refresh and self refresh

· 4096 refresh cycles / 64ms

· 168pin SDRAM Unbuffered DIMM

· Serial Presence Detect with EEPROM

· 1.375” (34.93mm) Height PCB with Single Sided

components

· Programmable Burst Length and Burst Type

-. 1, 2, 4, 8, or Full Page for Sequential Burst

-. 1, 2, 4 or 8 for Interleave Burst

· Single 3.3 ± 0.3V power supply

· All devices pins are compatible with LVTTL interface

· Data mask function by DQM

· Programmable /CAS Latency

-. 2, 3 Clocks

ORDERING INFORMATION

MAX.

FREQUENCY

INTERNAL

BANK

SDRAM

PACKAGE

PART NO.

REF.

POWER

PLATING

HYM7V63801BTFG-75

133MHz

4 Banks

Normal

TSOP-II

Gold

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.1/Apr.01

1999 Hyundai Electronics

12 3 4 5 6 7...13

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