Datasheet > HYM71V16635AT8M

HYM71V16635AT8M

更新时间： 2025-09-06 23:57:27

品牌	Logo	应用领域
其他 - ETC		动态存储器
页数	文件大小	规格书
14页	234K
描述
16Mx64\|3.3V\|K/H\|x8\|SDR SDRAM - Unbuffered DIMM 128MB

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中文翻译

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数据手册

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HYM71V16635AT8M 数据手册

16Mx64bits

PC133 SDRAM Unbuffered DIMM

based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM71V16635AT8M Series

DESCRIPTION

The Hynix HYM71V16635AT8M Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits

CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

printed circuit board. One 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.

The Hynix HYM71V16635AT8M Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes

memory. The Hynix HYM71V16635AT8M Series are fully synchronous operation referenced to the positive edge of the clock . All

inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high

bandwidth.

FEATURES

•

PC133/PC100MHz support

•

SDRAM internal banks : four banks

Module bank : one physical bank

Auto refresh and self refresh

168pin SDRAM Unbuffered DIMM

Serial Presence Detect with EEPROM

1.155” (29.34mm) Height PCB with single sided

components

4096 refresh cycles / 64ms

Programmable Burst Length and Burst Type

- 1, 2, 4 or 8 or Full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

•

Single 3.3±0.3V power supply

All device pins are compatible with LVTTL interface

Data mask function by DQM

•

Programmable CAS Latency ; 2, 3 Clocks

ORDERING INFORMATION

Clock

Internal

Bank

SDRAM

Part No.

Ref.

Power

Normal

Plating

Frequency

Package

HYM71V16635AT8M-K

HYM71V16635AT8M-H

HYM71V16635ALT8M-K

HYM71V16635ALT8M-H

133MHz

4 Banks

TSOP-II

Gold

Low Power

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev. 0.5/Dec. 01

12 3 4 5 6 7...14

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与HYM71V16635AT8M相关器件

型号	品牌	获取价格	描述	数据表
HYM71V16635AT8M-H	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635AT8M-K	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635BLT6-H	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635BLT6-K	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635BLT8-K	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635BT6	ETC	获取价格	16Mx64\|3.3V\|K/H\|x8\|SDR SDRAM - Unbuffered DIMM 128MB
HYM71V16635BT6-H	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635BT6-K	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
HYM71V16635BT8	ETC	获取价格	16Mx64\|3.3V\|K/H\|x8\|SDR SDRAM - Unbuffered DIMM 128MB
HYM71V16635HCLT8-H	HYNIX	获取价格	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168