Datasheet > HYG045P06LA1B

HYG045P06LA1B

更新时间： 2024-03-03 10:08:24

品牌	Logo	应用领域
华羿微 - HUAYI		电池
页数	文件大小	规格书
9页	1450K
描述
此器件为 -60V、3.9mΩ、TO-263-2L封装产品，采用Trench流片工艺，可满足如防反接，电池管理系统等应用领域。

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HYG045P06LA1B 数据手册

HYG045P06LA1B

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)

V^DSS

VGSS

Drain-Source Voltage

-60

±20

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Drain Current-Continuous

175

°C

T^STG

I^S

-55 to 175

-160

Tc=25°C

Mounted on Large Heat Sink

Tc=25°C

Tc=100°C

Tc=25°C

Tc=100°C

-710

-160

-113

250

125

0.6

I^DM

Pulsed Drain Current *

Continuous Drain Current

Maximum Power Dissipation

R_JC

R_JA

EAS

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient **

SinglePulsed-Avalanche Energy ***

L=0.3mH

817.6

Note:

Repetitive rating; pulse width limited by max junction temperature.

Surface mounted on FR-4 board.

***

Limited by T^Jmax , starting T^J=25°C, L = 0.3mH, VD=-48V, V^GS=-10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HYG045P06LA1

Symbol

Parameter

Test Conditions

Unit

Min

Typ

Max

Static Characteristics

V_GS=0V,I_DS=-250uA

V^DS=-60V, V_GS=0V

BV^DSS

Drain-Source Breakdown Voltage

-60

-1

I^DSS

Drain-to-Source Leakage Current

TJ=125°C

-50

-2.5

±100

VDS=VGS, I_DS=-250uA

V^GS=±20V,V^DS=0V

V_GS=-10V,I_D= -50A

V_GS=-4.5V,I_D= -45A

VGS(th)

IGSS

Gate Threshold Voltage

-1.0

-1.3

Gate-Source Leakage Current

mΩ

3.9

4.6

R^DS(ON)*

Drain-Source On-state Resistance

Diode Characteristics

V^SD*

trr

Diode Forward Voltage

ISD= -50A,VGS=0V

-0.75

32.1

29.8

-1.2

Reverse Recovery Time

Reverse Recovery Charge

ISD= -50A,dI/dt=100A/us

Qrr

www.hymexa.com

V1.0

123 4 5 6 7...9

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