5秒后页面跳转
HY62LF16804A-DM10I PDF预览

HY62LF16804A-DM10I

更新时间: 2024-09-24 23:57:15
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器
页数 文件大小 规格书
10页 153K
描述
x16 SRAM

HY62LF16804A-DM10I 数据手册

 浏览型号HY62LF16804A-DM10I的Datasheet PDF文件第2页浏览型号HY62LF16804A-DM10I的Datasheet PDF文件第3页浏览型号HY62LF16804A-DM10I的Datasheet PDF文件第4页浏览型号HY62LF16804A-DM10I的Datasheet PDF文件第5页浏览型号HY62LF16804A-DM10I的Datasheet PDF文件第6页浏览型号HY62LF16804A-DM10I的Datasheet PDF文件第7页 
HY62LF16804A Series  
512Kx16bit full CMOS SRAM  
Document Title  
512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM  
Revision History  
Revision No History  
Draft Date  
Remark  
04  
Initial Revision History Insert  
Revised  
Jul.02.2000  
Preliminary  
- Reliability Spec Deleted  
05  
Change AC Characteristics  
Oct.23.2000  
Preliminary  
- tCLZ : 10/10/20 ---> 10/10/10  
- tBLZ : 5/5/5  
---> 10/10/10  
06  
Part Number is changed  
Nov.13.2000 Preliminary  
- HY62LF16803A --> HY62LF16804A  
07  
08  
Marking Instruction is inserted  
Dec.5.2000 Preliminary  
Dec.16.2000 Preliminary  
Test Condition Changed  
- ILO / ISB / ISB1 / VDR / ICCDR  
Marking Istruction Inserted  
09  
Change Logo  
Apr.28.2001 Preliminary  
- Hyundai à Hynix  
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev.09 /Apr. 2001  
Hynix Semiconductor