Datasheet > HY5V26EFP-6I

HY5V26EFP-6I

更新时间： 2024-02-28 09:56:19

品牌	Logo	应用领域
海力士 - HYNIX		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	511K
描述
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54

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技术参数
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HY5V26EFP-6I 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	TFBGA, BGA54,9X9,32
针数：	54	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.02
风险等级：	5.33	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	5.4 ns	其他特性：	AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	166 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	S-PBGA-B54
JESD-609代码：	e1	长度：	8 mm
内存密度：	134217728 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	16	功能数量：	1
端口数量：	1	端子数量：	54
字数：	8388608 words	字数代码：	8000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装等效代码：	BGA54,9X9,32
封装形状：	SQUARE	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	260	电源：	3.3 V
认证状态：	Not Qualified	刷新周期：	4096
座面最大高度：	1.2 mm	自我刷新：	YES
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.002 A
子类别：	DRAMs	最大压摆率：	0.2 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	20	宽度：	8 mm
Base Number Matches：	1

HY5V26EFP-6I 数据手册

Synchronous DRAM Memory 128Mbit (8Mx16bit)

HY5V26E(L)F(P)-xxI Series

DESCRIPTION

The Hynix HY5V26E(L)F(P)-xxI series is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the memory

applications which require wide data I/O and high bandwidth. HY5V26E(L)F(P)-xxI series is organized as 4banks of

2,097,152 x 16.

HY5V26E(L)F(P)-xxI is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and

outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve

very high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write

cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(se-

quential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or

can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not re-

stricted by a '2N' rule)

FEATURES

•

Voltage: VDD and VDDQ 3.3V supply voltage

All device pins are compatible with LVTTL interface

54 Ball FBGA (Lead or Lead Free Package)

•

Programmable Burst Length and Burst Type

- 1, 2, 4, 8 or full page for Sequential Burst

- 1, 2, 4 or 8 for Interleave Burst

All inputs and outputs referenced to positive edge of

system clock

•

Programmable CAS Latency; 2, 3 Clocks

Burst Read Single Write operation

•

Data mask function by UDQM, LDQM

Internal four banks operation

Auto refresh and self refresh

4096 Refresh cycles / 64ms

•

Operation temperature : -40 ~ 85^oC

ORDERING INFORMATION

Operation

Temp.

Part No.

Clock Frequency Organization

Interface

Package

HY5V26E(L)F(P)-5I

HY5V26E(L)F(P)-6I

HY5V26E(L)F(P)-7I

HY5V26E(L)F(P)-HI

200MHz

166MHz

4Banks x

2Mbits x16

-40 ~ 85^oC

LVTTL

54 Ball FBGA

143MHz

133MHz

Note: 1. HY5V26EF-xxI Series: Normal power, Leaded.

2. HY5V26ELF-xxI Series: Low power, Leaded.

3. HY5V26EFP-xxI Series: Normal power, Lead Free.

4. HY5V26ELFP-xxI Series: Low power, Lead Free.

5. HY5V26ESF(P)-xxI Series: Super Low power; Contact Hynix Office for product availability.

Rev. 1.1 / Apr. 2005

123 4 5 6 7...12

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与HY5V26EFP-6I相关器件

型号	品牌	描述	获取价格	数据表
HY5V26EFP-HI	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54	获取价格
HY5V26ELF-5I	HYNIX	Synchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54	获取价格
HY5V26ELF-6	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54	获取价格
HY5V26ELF-7	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54	获取价格
HY5V26ELF-7I	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54	获取价格
HY5V26ELF-H	HYNIX	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54	获取价格

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