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HY514400BSLT-50 PDF预览

HY514400BSLT-50

更新时间: 2024-02-14 18:35:51
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
8页 101K
描述
x4 Fast Page Mode DRAM

HY514400BSLT-50 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP2, TSSOP20/26,.36
针数:20Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.56Is Samacsys:N
访问模式:FAST PAGE最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
长度:17.14 mm内存密度:4194304 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:20字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSSOP20/26,.36封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
刷新周期:1024座面最大高度:1.2 mm
自我刷新:YES最大待机电流:0.00015 A
子类别:DRAMs最大压摆率:0.1 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

HY514400BSLT-50 数据手册

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HY514400B  
1Mx4, Fast Page mode  
DESCRIPTION  
This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS  
DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process  
design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60  
or 70ns) and package type(SOJ or TSOP-II) and power consumption (Normal or Low power with self refresh). Hyundai’s  
advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and  
high reliability.  
FEATURES  
Ÿ Fast Page Mode operation  
Ÿ JEDEC standard pinout  
Ÿ Read-modify-write Capability  
Ÿ TTL compatible inputs and outputs  
Ÿ /CAS-before-/RAS, /RAS-only, Hidden and  
Self refresh capability  
Ÿ 20/26-pin SOJ (300mil)  
20/26-pin TSOP-II (300mil)  
Ÿ Single power supply of 5V ± 10%  
Ÿ Early Write or output enable controlled write  
Ÿ Fast access time and cycle time  
Ÿ Max. Active power dissipation  
Speed  
50  
Power  
550mW  
495mW  
440mW  
Speed  
50  
tRAC  
50ns  
60ns  
70ns  
tCAC  
15ns  
15ns  
20ns  
tPC  
35ns  
40ns  
45ns  
60  
60  
70  
70  
Ÿ Refresh cycle  
Part number  
Refresh  
1K  
Normal  
SL-part  
HY514400B  
16ms  
128ms  
ORDERING INFORMATION  
Part Name  
HY514400BJ  
Refresh  
Power  
Package  
1K  
1K  
1K  
1K  
1K  
1K  
20/26Pin SOJ  
HY514400BLJ  
HY514400BSLJ  
HY514400BT  
HY514400BLT  
L-part  
20/26Pin SOJ  
SL-part  
20/26Pin SOJ  
20/26Pin TSOP-II  
20/26Pin TSOP-II  
20/26Pin TSOP-II  
L-part  
HY514400BSLT  
SL-part  
*SL : Low power with self refresh  
This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of  
circuits described. No patent licences are implied  
Hyundai Semiconductor  
Rev.00 / Sep.97  
1

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