HY514400B
1Mx4, Fast Page mode
DESCRIPTION
This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS
DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
design allow this device to achieve high performance and low power dissipation. Optional features are access time(50, 60
or 70ns) and package type(SOJ or TSOP-II) and power consumption (Normal or Low power with self refresh). Hyundai’s
advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and
high reliability.
FEATURES
Ÿ Fast Page Mode operation
Ÿ JEDEC standard pinout
Ÿ Read-modify-write Capability
Ÿ TTL compatible inputs and outputs
Ÿ /CAS-before-/RAS, /RAS-only, Hidden and
Self refresh capability
Ÿ 20/26-pin SOJ (300mil)
20/26-pin TSOP-II (300mil)
Ÿ Single power supply of 5V ± 10%
Ÿ Early Write or output enable controlled write
Ÿ Fast access time and cycle time
Ÿ Max. Active power dissipation
Speed
50
Power
550mW
495mW
440mW
Speed
50
tRAC
50ns
60ns
70ns
tCAC
15ns
15ns
20ns
tPC
35ns
40ns
45ns
60
60
70
70
Ÿ Refresh cycle
Part number
Refresh
1K
Normal
SL-part
HY514400B
16ms
128ms
ORDERING INFORMATION
Part Name
HY514400BJ
Refresh
Power
Package
1K
1K
1K
1K
1K
1K
20/26Pin SOJ
HY514400BLJ
HY514400BSLJ
HY514400BT
HY514400BLT
L-part
20/26Pin SOJ
SL-part
20/26Pin SOJ
20/26Pin TSOP-II
20/26Pin TSOP-II
20/26Pin TSOP-II
L-part
HY514400BSLT
SL-part
*SL : Low power with self refresh
This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of
circuits described. No patent licences are implied
Hyundai Semiconductor
Rev.00 / Sep.97
1