HY27UA081G1M-TPEP

更新时间： 2024-01-03 06:39:21

品牌	Logo	应用领域
海力士 - HYNIX		闪存
页数	文件大小	规格书
43页	729K
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HY27UA(08/16)1G1M Series

HY27SA(08/16)1G1M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

No.

0.0

History

Draft Date

Remark

1) Initial Draft

Nov. 28. 2003 Preliminary

Mar. 11. 2004 Preliminary

0.1

1) Add 1.8V Operation Product to Data sheet

1) Change AC Characteristics

- tWP(25ns->40ns), tWC(50ns->60ns),

- tRP(30ns->40ns), tRC(50ns->60ns),

- tREADID(35ns->45ns)

0.2

Apr. 29. 2004 Preliminary

1) Add Errata (3V Product)

tWH tREH

Specification

Relaxed value

0.3

May. 14. 2004 Preliminary

2) Add Applicaiton Note

Reset command must be issued when the controller writes data to

another 512Mb.(i.e. When A26 is changed during program.)

3) Modify the description of Device Operations

- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled

(Enabled) (Page22)

4) Add the description of System Interface Using /CE don’t care (Page37)

1) Delete Errata

2) Change Characteristics

tCRY

tREA@ID Read

0.4

0.5

Jun. 01. 2004 Preliminary

Before

After

60 + tr

70 + tr

3) Delete Cache Program

1) Change TSOP1, WSOP1, FBGA package dimension

2) Edit TSOP1, WSOP1 package figures

3) Change FBGA package figure

Oct. 20. 2004

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.5 / Oct. 2004

12 3 4 5 6 7...43

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