Datasheet > HXR5104B

HXR5104B

更新时间： 2024-02-26 03:13:21

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
19页	171K
描述
4 Channel 14Gbps Receiver

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数据手册

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HXR5104B 数据手册

IDT70V9389/289L

High-Speed 3.3V 64K x18/x16 Dual-Port Synchronous Pipelined Static RAM

Industrial & Commercial Temperature Ranges

Truth Table II—Address Counter Control^(1,2)

Previous Internal

MODE

External

Internal Address

Address Address

Used

CLK

↑

I/O⁽³⁾

ADS

CNTEN CNTRST

L⁽⁴⁾

DI/O(0)

Counter Reset to Address 0

L⁽⁴⁾

DI/O(n)

External Address Loaded into Counter

↑

DI/O(p)

External Address Blocked—Counter disabled (Ap reused)

Ap + 1

L⁽⁵⁾

DI/O(p+1) Counter Enabled—Internal Address generation

↑

4856 tbl 03

NOTES:

1. "H" = VIH, "L" = VIL, "X" = Don't Care.

2. CE⁰, LB, UB, and OE = VIL; CE1 and R/W = VIH.

3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.

4. ADS and CNTRST are independent of all other signals including CE⁰, CE1, UB and LB.

5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.

RecommendedOperating

RecommendedDCOperating

Conditions

TemperatureandSupplyVoltage⁽¹⁾

Symbol

Parameter

Supply Voltage

Ground

Min.

Typ.

Max.

Unit

Ambient

Grade

Commercial

Temperature⁽²⁾

0^OC to +70^OC

-40^OC to +85^OC

GND

VDD

3.0

3.3

3.6

3.3V

0.3V

Industrial

0.3V

____

Input High Voltage

Input Low Voltage

2.0

DD+0.3V⁽²⁾

0.8

4856 tbl 04

____

NOTE:

-0.3⁽¹⁾

1. This is the parameter TA. This is the "instant on" case temperature.

4856 tbl 05

NOTES:

1. VIL > -1.5V for pulse width less than 10 ns.

2. VTERM must not exceed VDD +0.3V.

AbsoluteMaximumRatings⁽¹⁾

Capacitance⁽¹⁾

(TA = +25°C, f = 1.0MHZ)

Symbol

Rating

Commercial

& Industrial

Unit

Symbol

Parameter

Input Capacitance

Output Capacitance

Conditions⁽²⁾

IN = 3dV

OUT = 3dV

Max. Unit

(2)

TERM

Terminal Voltage

with Respect to

GND

-0.5 to +4.6

CIN

(3)

OUT

(3)

Temperature

Under Bias

-55 to +125

-65 to +150

^oC

TBIAS

4856 tbl 07

NOTES:

TSTG

Storage

Temperature

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

TJN

Junction Temperature

DC Output Current

+150

IOUT

3. COUT also references CI/O.

4856 tbl 06

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns

maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.

3. Ambient Temperature Under DC Bias. No AC Conditions. Chip Deselected.

6.42

1...4 5 678 9 10...19

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