Datasheet > HTC1000-S

HTC1000-S

更新时间： 2024-10-01 22:33:43

品牌	Logo	应用领域
莱姆 - LEM		转换器
页数	文件大小	规格书
2页	134K
描述
Current Transducers HTC 1000~3000-S

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中文翻译

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数据手册

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HTC1000-S 数据手册

Current Transducers HTC 1000..3000-S I_PN= ±1000..3000 A

For the electronic measurement of currents: AC,DC, pulsed, mixed,

with a galvanic isolation between the primary circuit (high power) and

the secondary circuit (electronic circuit).

V_OUT= ±10 V

Preliminary

Electrical data

Primarynominal

current

Primary current

measuring range

I_P(A)

Type

I_PN(A)

1000

2000

3000

±1100

±2200

±3300

HTC 1000-S

HTC 2000-S

HTC 3000-S

Features

· Halleffectmeasuringprinciple

· Galvanicinsulationbetweenprimary

and secondary circuit

V_C

Supply voltage (±3 %)

±15

I_C

Current consumption

< ±20

> 500

±10

· UL 94-V0 rated

R_IS

V_out

R_OUT

V_d

Insulation resistance @ 500 VDC

Output voltage @ ± I_PN,R_L=2kW, T_A=25°C,

Output internal resistance

< 100

2.5

Advantages

R.m.s. voltage for AC insulation test, 50/60Hz,1mn

Load resistance

· Easy mounting

· Compact

R_L

³ 2

· High immunity to external

interference

· Low power consumption

Accuracy-Dynamic performance data

Accuracy @ I_PN, T_A= 25°C

Linearity (0 .. ± I_PN)

< ±1

%of I_PN

%/K

< ±1

Applications

TCe

V_OE

Thermal drift of the gain

£ ±0.1

< ±30

· Traction

Eletrical offset voltage T_A= 25°C

Hysteresis offset voltage

V_OH

@ I_P= 0; after an excursion of 1 x I_PN

Thermal drift of offset

< ±50

< ±1.0

£ 10

mV/K

µs

V_OT

t_r

Response time @ 90% of I_P@ di/dt = 100A/µs

Frequency bandwidth (- 3dB)

DC .. 10 kHz

General data

T_A

T_S

Ambient operating temperature

-40 .. +85 °C

Ambient storage temperature

Mass

450

Standards

EN 50155

Notes :

040512/2

www.lem.com

LEM Components

中文翻译

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