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HTB50-TP PDF预览

HTB50-TP

更新时间: 2024-02-05 18:16:15
品牌 Logo 应用领域
莱姆 - LEM 转换器传感器换能器
页数 文件大小 规格书
2页 81K
描述
Current Transducers HTB 50~400-P and HTB 50~100-TP

HTB50-TP 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:ROHS COMPLIANT PACKAGEReach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
其他特性:IT ALSO REQUIRES MINUS 15 VOLT POWER SUPPLY AND PLUS/MINUS 12 VOLT主体宽度:11 mm
主体高度:34 mm主体长度或直径:39 mm
安装特点:THROUGH HOLE MOUNT最高工作温度:80 °C
最低工作温度:-40 °C输出范围:-4-4V
输出类型:ANALOG VOLTAGE封装形状/形式:RECTANGULAR
电阻:100 Ω传感器/换能器类型:MAGNETIC FIELD SENSOR,HALL EFFECT
最大供电电压:15.75 V最小供电电压:14.25 V
表面贴装:NO端接类型:SOLDER
Base Number Matches:1

HTB50-TP 数据手册

 浏览型号HTB50-TP的Datasheet PDF文件第2页 
Current Transducers HTB 50 .. 400-P  
and HTB 50 .. 100-TP  
IPN = 50 .. 400 A  
For the electronic measurement of currents: DC, AC, pulsed, mixed,  
with a galvanic isolation between the primary circuit (high power) and  
the secondary circuit (electronic circuit).  
Electrical data  
Primarynominal  
r.m.s. current  
IPN (A)  
Primary current  
measuring range  
IP (A)  
Type  
50  
100  
200  
300  
400  
±150  
±300  
±500  
±600  
±600  
HTB 50-P, HTB 50-TP1)  
HTB 100-P, HTB 100-TP1)  
HTB 200-P  
Features  
· Hall effect measuring principle  
· Galvanic isolation between primary  
and secondary circuit  
HTB 300-P  
HTB 400-P  
· Isolationvoltage2500V  
· Low power consumption  
· Wide power supply: ±12V to ±15V  
· Primary bus bar option for 50A and  
100A version for ease of connection  
VC  
Supply voltage (±5 %) 2)  
Current consumption  
±12 .. ±15  
<±15  
V
mA  
kV  
IC  
Vd  
R.m.s. voltage for AC isolation test, 50/60 Hz, 1 mn 2.5  
RIS  
VOUT  
ROUT  
RL  
Isolation resistance @ 500 VDC  
Output voltage @ ± IPN, RL = 10 kW, TA = 25°C  
Output internal resistance  
>500  
MW  
V
±4  
100  
³ 10  
W
Load resistance  
kW  
Advantages  
· Small size and space saving  
· Only one design for wide current  
ratings range  
Accuracy - Dynamic performance data  
· High immunity to external  
interference.  
X
Accuracy @ IPN, TA = 25°C (without offset)  
Linearity (0 .. ± IPN)  
<±1  
% of IPN  
% of IPN  
mV  
e
<±1  
L
VOE  
VOH  
Electrical offset voltage, TA = 25°C  
Hysteresis offset voltage @ IP = 0;  
after an excursion of 3 x IPN  
<±30  
Applications  
<±1  
% of IPN  
mV/K  
mV/K  
%/K  
· AC variable speed drives  
· Static converters for DC motor drives  
· Battery supplied applications  
· Uninterruptible Power Supplies  
(UPS)  
VOT  
Thermal drift of VOE HTB 50-(T)P  
HTB 100-(T)P..400-P  
<±2.0  
<±1.0  
<±0.1  
<3  
TCe  
Thermal drift (% of reading)  
Response time @ 90% of IP  
Frequency bandwidth (0..-3 dB) 3)  
G
tr  
f
ms  
DC .. 50  
kHz  
· Switched Mode Power Supplies  
(SMPS)  
· Power supplies for welding  
applications.  
General data  
TA  
TS  
m
Ambient operating temperature  
-20 .. +80  
-25 .. +85  
<30 (<36)  
°C  
°C  
g
Ambient storage temperature  
Mass (-TP version)  
2 pins of Ø2mm diameter are available on transducer  
for PCB soldering.  
Notes : EN 50178 approval pending  
1)  
-TP version is equipped with a primary bus bar.  
2) Operating at ±12V £ Vc < ±15V will reduce measuring range.  
3) Derating is needed to avoid excessive core heating at high frequency.  
040720/9  
LEM Components  
www.lem.com  

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