HT8KB5
Datasheet
llThermal resistance
Values
Parameter
Symbol
Unit
Min. Typ. Max.
*1
RthJC
Thermal resistance, junction - case
Thermal resistance, junction - ambient
-
-
-
-
9.4
℃/W
*4
RthJA
62.5 ℃/W
llElectrical characteristics (Ta = 25°C) <Tr1 and Tr2>
Values
Parameter
Symbol
V(BR)DSS
Conditions
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V
= 0V, I = 1mA
40
-
-
-
-
V
GS
D
ΔV
I = 1mA
D
(BR)DSS
Breakdown voltage
temperature coefficient
28.9
mV/℃
ΔT
referenced to 25℃
j
Zero gate voltage
drain current
IDSS
IGSS
V
DS
V
GS
V
DS
= 40V, V = 0V
GS
-
-
-
-
-
1
μA
nA
V
Gate - Source
leakage current
= ±20V, V = 0V
±100
2.5
DS
Gate threshold
voltage
VGS(th)
= V , I = 1mA
1.0
GS D
ΔVGS(th)
I = 1mA
D
Gate threshold voltage
temperature coefficient
-
-4.6
-
mV/℃
ΔT
referenced to 25℃
j
V
GS
V
GS
= 10V, I = 5.0A
-
-
-
36
58
47
81
-
D
Static drain - source
on - state resistance
*5
RDS(on)
mΩ
Ω
= 4.5V, I = 5.0A
D
RG
Gate resistance
-
2.7
Forward Transfer
Admittance
|Y |*5
V
DS
= 5V, I = 5A
2.1
-
-
S
fs
D
*1 T = 25℃, Limited only by maximum temperature allowed.
c
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 0.1mH, V = 20V, R = 25Ω, Starting T = 25℃ Fig.3-1,3-2
DD
G
j
*4 Mounted on a Cu board (40×40×0.8mm)
*5 Pulsed
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