Datasheet > HSWA4-63DR

HSWA4-63DR

更新时间： 2022-02-26 13:54:11

品牌	Logo	应用领域
MINI		/
页数	文件大小	规格书
5页	359K
描述
SP4T RF Switch

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数据手册

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HSWA4-63DR 数据手册

S^MMP^IC4T RF Switch

50Ω 30MHz - 6 GHz

Absorptive RF Switch with internal driver

Single Supply Voltage, +2.3V to +5.5V

Product Features

• High Isolation, 61 dB typ. at 0.9 GHz

• Low insertion loss, 0.9 dB typ. at 0.9 GHz

• High IP3, 58 dBm typ.

• Fast switching time, 255 ns typ.

• Low current consumption, 110 µA typ.

HSWA4-63DR+

CASE STYLE: DG984-1

+RoHS Compliant

The +Suffix identifies RoHS Compliance. See our web site

for RoHS Compliance methodologies and qualifications

Typical Applications

• Defense

• Test and Measurements

• Switch matrices

General Description

HSWA4-63DR+ is a high isolation absorptive SP4T switch with integral CMOS driver, operates with single

positive supply voltage while consuming, 110 µA typical. It has been designed for very wideband operation.

It is packaged in a tiny 4 x 4 x 0.9 mm 24-lead package and is rated MSL1.

Simplified Schematic and Pad Description

Pad

Function

RF COM

RF1

Number

Description

RF common/ SUM port*

RF OUT #1/Input #1*

RF OUT #2/Input #2*

RF-OUT #3 /Input #3*

RF-OUT #4 /Input #4*

CMOS Control IN #1

CMOS Control IN #2

CMOS Control IN #3

Supply voltage

RF2

RF3

RF4

Control 1

Control 2

Control 3

VDD

1-4, 6,9,10,12,13,15

20,21,23,24

GND

RF ground

*Must be held at 0VDC. If required add DC blocking capacitors on these ports.

REV. OR

M161993

HSWA4-63DR+

RS/CP

170515

Page 2 of 5

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