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HSMCJ78C

更新时间： 2024-02-11 23:37:34
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 139K
描述
Trans Voltage Suppressor Diode, 2000W, 78V V(RWM), Bidirectional, 1 Element, Silicon, MODIFIED DO-214AB, 2 PIN

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HSMCJ78C 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-214AB包装说明：MODIFIED DO-214AB, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.92最大击穿电压：106 V
最小击穿电压：86.7 V最大钳位电压：139 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-C2
JESD-609代码：e0最大非重复峰值反向功率耗散：2000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：78 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HSMCJ78C 数据手册

 浏览型号HSMCJ78C的Datasheet PDF文件第2页浏览型号HSMCJ78C的Datasheet PDF文件第3页浏览型号HSMCJ78C的Datasheet PDF文件第4页 
8700 E. Thomas Road  
Scottsdale, AZ 85252  
Phone: (480) 941-6300  
Fax: (480) 947-1503  
HSMCJ5.0  
thru  
HSMCJ170A  
FEATURES:  
·
·
·
·
·
UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT TAZ  
2000 WATTS PEAK POWER  
VOLTAGE RANGE: 5.0 TO 170 VOLTS  
LOW INDUCTANCE  
FOR SURFACE MOUNTING  
5.0 thru 170 Volts  
2000 Watts  
Transient Absorption  
Zeners  
DESCRIPTION:  
This series of TAZ (transient absorption zeners) are available in surface  
mountable packages to optimize board space. Packaged for use with  
surface mount technology automated assembly equipment, these parts  
can be placed on printed circuit boards and ceramic substrates to  
protect sensitive components from transient voltage damage.  
The HSMCJ series, rated for 2000 watts during a one millisecond pulse,  
can be used to protect sensitive circuits against transients induced by  
lightning and inductive load switching. With a response time of 1 x 10-12  
seconds (theoretical), they are also effective against electrostatic  
discharge and NEMP.  
SUGGESTED SOLDER  
PAD LAYOUT (INCHES)  
0.171  
MAXIMUM RATINGS:  
2000 watts if Peak Power dissipation (10 x 1000ms)  
Clamping (0 volts to V(BR) min): less than 1 x 10-12 seconds  
(theoretical)  
0.110  
Package Dimensions  
Forward surge rating: 200 Amps, 1/120 sec @ 25°C (Excluding  
Bidirectional)  
Package Dimensions  
See Figure 5  
Operating and Storage Temperature: -55° to +150°C  
Note: A TAZ is normally selected according to the reverse "Stand Off  
Voltage" (VRM) which should be equal to or greater than the dc or  
continuous peak operating voltage level.  
Mechanical  
Characteristics  
CASE: Molded, Surface Mountable.  
100  
(Wave Form - See  
Figure 2)  
Non-Repetitive  
TERMINALS: C-Bend (modified J-  
bend) leads, tin plated  
10  
POLARITY: Cathode indicated by  
band. No markings on bidirectional  
devices.  
1.0  
0.1  
PACKAGING: 16mm tape (See EIA  
Std. RS-481.)  
1µs  
100ns  
10µs  
100µs  
1ms  
10ms  
tp Pulse Time - sec  
Figure 1  
Peak Pulse Power vs Pulse Time  
THERMAL RESISTANCE: 10°C/W  
(typical) junction to lead (tab) at  
mounting plane.  
MSC1065.PDF 6/21/99  
1234

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