Datasheet > HSC106D

HSC106D

更新时间： 2024-09-29 05:36:51

品牌	Logo	应用领域
SEMIHOW		栅
页数	文件大小	规格书
4页	208K
描述
Sensitive Gate Silicon Controlled Rectifier

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中文翻译

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数据手册

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HSC106D 数据手册

V_DRM= 400 V

I_T(RMS)= 4.0A

HSC106D

Sensitive Gate Silicon Controlled Rectifier

2.Anode

Symbol

FEATURES

3.Gate

Repetitive Peak Off-State Voltage (V_RM= 400V)

R.M.S On-state Current (I_T(RMS)=4.0A)

1.Cathode

Average On-state Current (I_T(AV)=2.55A)

Sensitive Gate Triggering (0.2mA_Max@25℃)

General Description

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light and speed control ; process

and remote control, and warning systems where reliability of

operation is important.

HSC106D

(

T_J=25℃)

Absolute Maximum Ratings

Symbol

V_DRM

Parameter

Value

400

Units

Repetitive Peak Off-State Voltage (Forward)

Repetitive Peak Off-State Voltage (Reverse)

On-State R.M.S Current

V_RRM

400

I_T(RMS)

4.0

(180 Condition Angles, T =80

)

℃

On-State Average Current

I_T(AV)

2.55

(180 Condition Angles, T =80

)

℃

Surge On-State Current (1/2 Cycle, 60Hz, Sine

I_TSM

I²t

1.65

0.5

A²s

Wave, Non-repetitive, Tj = 110 C)

Circuit Fusing Considerations (t=8.3mS)

Forward Peak Gate Power Dissipation

P_GM

(Pulse Width 1.0 sec,Tc=80 )

℃

≤

Forward Average Gate Power Dissipation

(Pulse Width 1.0 sec, Tc=80

P_G(AV)

V_GRM

I_FGM

0.1

6.0

0.2

)

℃

≤

Reverse Peak Gate Voltage

Forward Peak Gate Current

(Pulse Width 1.0 sec, Tc=80 )

℃

≤

T_STG

T_j

Storage Temperature Range

Operating Junction Temperature

-40 to +150

-40 to +110

℃

◎ SEMIHOW REV.1.1 May 2007

12 3 4

中文翻译

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