Datasheet > HSC106D_M

HSC106D_M

更新时间： 2022-02-26 12:42:03

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
4页	354K
描述
Silicon Controlled Rectifier

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HSC106D_M 数据手册

Dec 2014

V_DRM

400V / 600 V

_T(RMS)= 4.0A

HSC106D/M

Silicon Controlled Rectifier

2.Anode

Symbol

FEATURES

3.Gate

 Repetitive Peak Off-State Voltage (V_DRM=400V/600V)

 R.M.S On-State Current (I_T(RMS)=4.0A)

1.Cathode

 Average On-State Current (I_T(AV)=2.55A)

TO-126

1. K

2. A

3. G

General Description

HSC106D/M

Glassivated PNPN devices designed for high volume consumer

applications such as temperature, light and speed control, process

and remote control, and warning systems where reliability of

operation is important.

(T =25

)

℃

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Repetitive Peak Off-State Voltage (Forward) HSC106D

HSC106M

400

600

V_DRM

Repetitive Peak Off-State Voltage (Reverse) HSC106D

HSC106M

400

600

V_RRM

I_T(RMS)

I_T(AV)

R.M.S On-State Current (All conduction angles)

Average On-State Current

4.0

2.55

Surge On-State Current

(1/2 Cycle, 60Hz, Sine Wave, Non Repetitive, T_j=110℃)

I_TSM

Forward Peak Gate Power Dissipation

(Pulse Width ≤1.0μsec, Tc=80℃)

P_GM

0.5

Forward Average Gate Power Dissipation

(Pulse Width ≤1.0μsec, Tc=80℃)

P_G(AV)

V_RGM

I_FGM

0.1

6.0

0.2

Reverse Peak Gate Voltage

Forward Peak Gate Current

(Pulse Width ≤1.0μsec, Tc=80℃)

T_STG

T_j

Storage Temperature Range

-40 to +150

-40 to +110

℃

Operating Junction Temperature

◎ SEMIHOW REV.A0, December 2014

12 3 4

下载PDF

与HSC106D_M相关器件

型号	品牌	描述	获取价格	数据表
HSC106M	SEMIHOW	Silicon Controlled Rectifier	获取价格
HSC10DRAH	ETC	CONN EDGE DUAL FMALE 20POS 0.100	获取价格
HSC10DRAH-S734	ETC	CONN EDGE DUAL FMALE 20POS 0.100	获取价格
HSC10DRAI	ETC	CONN EDGE DUAL FMALE 20POS 0.100	获取价格
HSC10DRAI-S734	ETC	CONN EDGE DUAL FMALE 20POS 0.100	获取价格
HSC10DRAN	ETC	CONN EDGE DUAL FMALE 20POS 0.100	获取价格