Datasheet > HS9-6664RH-Q

HS9-6664RH-Q

更新时间： 2024-02-02 11:59:22

品牌	Logo	应用领域
英特矽尔 - INTERSIL		内存集成电路可编程只读存储器 OTP只读存储器
页数	文件大小	规格书
5页	258K
描述
Radiation Hardened 8kx8 CMOS PROM

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HS9-6664RH-Q 数据手册

HS-6664RH

Data Sheet

August 2000

File Number 3197.4

Radiation Hardened 8kx8 CMOS PROM

Features

The Intersil HS-6664RH is a radiation hardened 64k CMOS

PROM, organized in an 8k word by 8-bit format. The chip is

manufactured using a radiation hardened CMOS process,

and utilizes synchronous circuit design techniques to

achieve high speed performance with very low power

dissipation.

• Electrically Screened to SMD # 5962-95626

[ /Title

(HS-

6664R

/Subjec

(Radiat

ion

Harden

ed 8K

x 8

• QML Qualified per MIL-PRF-38535 Requirements

• 1.2 Micron Radiation Hardened Bulk CMOS

• Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)

• Transient Output Upset . . . . . . . . . . . . . .>5x10 rad(Si)/s

On-chip address latches are provided, allowing easy

interfacing with microprocessors that use a multiplexed

address/data bus structure. The output enable control (G)

simplifies system interfacing by allowing output data bus

control in addition to the chip enable control (E). All bits are

manufactured storing a logical “0” and can be selectively

programmed for a logical “1” at any bit location.

• LET >100 MEV-cm /mg

• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)

• Single 5V Power Supply

• Single Pulse 10V Field Programmable

• Synchronous Operation

CMOS

PROM

)

/Autho

r ()

/Keyw

ords

(Intersi

Corpor

ation,

semico

nducto

Radiati

Harden

ed,

Applications for the HS-6664RH CMOS PROM include low

power microprocessor based instrumentation and

communications systems, remote data acquisition and

processing systems, and processor control storage.

• On-Chip Address Latches

• Three-State Outputs

• NiCr Fuses

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

• Low Standby Current . . . . . . . . . . . . . . <500μA (Pre-Rad)

• Low Operating Current. . . . . . . . . . . . . . . . . . <15mA/MHz

• Military Temperature Range. . . . . . . . . . . -55 C to 125 C

Detailed Electrical Specifications for these devices are

contained in SMD 5962-95626. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.htm

Ordering Information

INTERNAL

MKT. NUMBER

TEMP. RANGE

ORDERING NUMBER

5962F9562601QXC

5962F9562601QYC

5962F9562601VXC

5962F9562601VYC

HS1-6664RH/PROTO

HS9-6664RH/PROTO

( C)

HS1-6664RH-8

-55 to 125

HS9-6664RH-8

HS1-6664RH-Q

RH,

Rad

Hard,

QML,

Satellit

HS9-6664RH-Q

HS1-6664RH/PROTO

HS9-6664RH/PROTO

SMD,

Class

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5

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与HS9-6664RH-Q相关器件

型号	品牌	获取价格	描述	数据表
HS9-6664RH-T	INTERSIL	获取价格	Radiation Hardened 8K x 8 CMOS PROM
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HS9716TB	ETC	获取价格	Sample/Track-and-Hold Amplifier

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