HRC0203B

更新时间： 2024-02-12 19:57:10

品牌	Logo	应用领域
日立 - HITACHI		肖特基二极管
页数	文件大小	规格书
6页	33K
描述
Silicon Schottky Barrier Diode for Rectifying

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数据手册

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HRC0203B 数据手册

HRC0203B

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

Repetitive peak reverse

voltage

V_RRM

Average rectified current I_o

200

Non-Repetitive peak

forward surge current

I_FSM

Junction temperature

Storage temperature

Tstg

125

°C

-55Å`+125

Note 1. See from Fig.3 to Fig.5

2. 10msec sine wave 1 pulse

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ Max Unit Test Condition

Forward voltage

Reverse current

V_F

I_R

—

0.52

I_F= 200 mA

—

µA

V_R= 30V

Thermal resistance R_th(j-a)

Note 1. Polyimide board

500

—

°C/W Polyimide board^*1

20hx15wx0.8t

1.5

Unit: mm

1.5

123 4 5 6

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