生命周期: | Obsolete | 包装说明: | POWER, PLASTIC, SC-62, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.78 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 10 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 150 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 2 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HQ1F2Q-T2-AZ | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,2A I(C),SOT-89 | |
HQ1F3M | NEC |
获取价格 |
COMPOUND TRANSISTOR | |
HQ1F3M-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,2A I(C),SOT-89 | |
HQ1F3M-AZ | NEC |
获取价格 |
暂无描述 | |
HQ1F3M-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PL | |
HQ1F3M-T2 | NEC |
获取价格 |
2000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN | |
HQ1F3M-T2-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,2A I(C),SOT-89 | |
HQ1F3M-T2-AZ | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,2A I(C),SOT-89 | |
HQ1F3P | NEC |
获取价格 |
COMPOUND TRANSISTOR | |
HQ1F3P-AY | RENESAS |
获取价格 |
PRE-BIASED DIGITAL TRANSISTOR,20V V(BR)CEO,2A I(C),SOT-89 |