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HPMX-2006 PDF预览

HPMX-2006

更新时间: 2024-01-19 10:30:15
品牌 Logo 应用领域
安捷伦 - AGILENT 放大器
页数 文件大小 规格书
8页 91K
描述
0.8 - 2.5 GHz Upconverter/Amplifier

HPMX-2006 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SSOP,
针数:16Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.54
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
长度:4.9025 mm功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.829 mm
标称供电电压:3 V表面贴装:YES
电信集成电路类型:RF AND BASEBAND CIRCUIT温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.635 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9115 mm
Base Number Matches:1

HPMX-2006 数据手册

 浏览型号HPMX-2006的Datasheet PDF文件第1页浏览型号HPMX-2006的Datasheet PDF文件第3页浏览型号HPMX-2006的Datasheet PDF文件第4页浏览型号HPMX-2006的Datasheet PDF文件第5页浏览型号HPMX-2006的Datasheet PDF文件第6页浏览型号HPMX-2006的Datasheet PDF文件第7页 
The amplifier features a single-  
ended 50 match on the input  
port. The open collector output is  
easily matched with a simple  
2 elementnetwork,providing  
flexible use and good power  
added efficiency. The amplifier  
draw to around 15 mA. The entire  
IC can be put into a standby mode using Hewlett-Packard’s 30 GHz  
reducing current consumption to  
under 40 µA from a 3V source.  
The HPMX-2006 is manufactured  
ISOSAT-II process which com-  
bines stepper lithography, self  
alignment, ion implantation  
The SSOP-16 package insures that techniques and gold metalization  
the IC occupies a minimal amount to produce state-of-the-art RFICs.  
can be disabled to allow use of the of printed circuit board space.  
mixer alone, reducing the current  
HPMX-2006 Absolute Maximum Ratings[1]  
Mixer  
Amplifier  
Symbol  
Parameter  
Units  
V
Min.  
Max.  
8
Min.  
Max.  
8
VCC  
Supply Voltage  
-0.2  
-0.2  
P
Power Dissipation[2,3]  
mW  
V
174  
274  
diss  
Single-Ended Input Mixer LO Voltage  
Single-Ended Input Mixer IF Voltage  
Amplifier Input RF Power  
Junction Temperature  
VC+0.2  
VC+0.2  
V
dBm  
°C  
+5  
T
-40  
-40  
+150  
+150  
-40  
-40  
+150  
+150  
j
T
Storage Temperature  
°C  
STG  
Notes:  
Thermal Resistance[2]:  
θ =150°C/W  
1. Operation of this device in excess of any of these parameters may cause  
permanent damage.  
2. TCASE =25°C  
jc  
3. Derate at 7 mW/°C for TCASE >82°C.  
Recommended operating range of V = 2.7 to 5.5 V, T = -40 to + 85°C  
cc  
a
Standard Test Conditions  
Unless otherwise stated, all test data was taken on packaged parts under the following conditions:  
V =+3.0VDC,Z =50,ambienttemperatureT =25°C  
cc  
out  
a
LO input: 1750 MHz, -3 dBm, single-ended  
IF input: 150 MHz, 300 mV , single-ended, terminated in a 50 pull-up resistor (R1R2 in Figure 11)  
p-p  
Z
=Z  
=50 , Z  
perFigure11((L=2.8nH, C=2.2pF)  
outmixer  
inamp  
outamp  
See Figure 11 for test set-up schematic diagram.  
HPMX-2006 Guaranteed Electrical Specifications  
Standard test conditions apply unless otherwise noted.  
Symbol  
Parameters and Test Conditions  
Units  
Min.  
Typ.  
Max.  
IC mix  
Sleep Mode Current, Mixer  
µA  
µA  
mA  
20  
20  
18  
28  
IC amp Sleep Mode Current, Amplifier  
IC mix Mixer Transmit Current  
IC amp Amplifier Transmit Current  
15  
23  
mA  
Pout  
Pout  
SSB Output Power, Mixer Only  
Output Power, Amplifier Only (-9.5 dBm in)  
dBm  
dBm  
-11  
+2.5  
-9  
+3.8  
7-67  

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