Datasheet > HPMX-3002

HPMX-3002

更新时间： 2024-01-09 17:57:26

品牌	Logo	应用领域
安捷伦 - AGILENT		放大器射频微波驱动
页数	文件大小	规格书
8页	92K
描述
Silicon Bipolar RFIC 900 MHz Driver Amplifier

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技术参数
数据手册

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HPMX-3002 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SOP8,.3	Reach Compliance Code：	unknown
风险等级：	5.12	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	32 dB
最大输入功率 (CW)：	5 dBm	JESD-609代码：	e0
安装特点：	SURFACE MOUNT	端子数量：	8
最大工作频率：	960 MHz	最小工作频率：	150 MHz
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOP8,.3
电源：	5 V	射频/微波设备类型：	WIDE BAND MEDIUM POWER
子类别：	RF/Microwave Amplifiers	表面贴装：	YES
技术：	BIPOLAR	端子面层：	Tin/Lead (Sn/Pb)
最大电压驻波比：	1.5	Base Number Matches：	1

HPMX-3002 数据手册

Silicon Bipolar RFIC

900 MHz Driver Amplifier

Technical Data

HPMX-3002

Description

Hewlett-Packard’sHPMX-3002is

a silicon microwave monolithic

integrated circuit driver amplifier

housed in a S0-8 surface mount

plastic package. It operates over

the150-960MHzfrequency

Features

• RFIC Medium Power

Amplifier

• 150-960 MHz Operating

Range

•+22dBmTyp.P_ldB,+23 dBm

Typ. P_sat@ 900 MHz

Plastic S0-8 Package

range, and at 900 MHz it produces

+23 dBm of saturated output

power, has 30 dB of small signal

gain and a 50 dB power control

range. The amplifier has a well-

matched input, and an open

collector output which provides

good linearity and efficiency and

is easy to externally match to 50

Ω for optimal power output.

• 50 dB Typ. Power Control

Range

• 6 V, 160 mA Operation

• S0-8 Surface Mount Package

with Improved Heatsinking

Pin Configuration

Applications

• Driver Amplifier for GSM

Cellular Handsets

• Driver or Output Stage for

900 MHz ISM Band

Transmitters

• Driver or Output Stage for

Transmitters Operating in

the 150-960 MHz Range

GROUND AND

THERMAL

CONTACT

GROUND AND

THERMAL

CONTACT

CC1

GROUND

AND V

CC2

OUT

This device is well suited as a

driver amplifier for European

GSM (Global System for Mobile

communications) portable and

mobile telephone systems, or as

the output stage for other low

cost applications such as 900 MHz

ISM band spread-spectrum.

POWER CONTROL

Functional Block Diagram

(2)

CC1

The HPMX-3002 is fabricated with

Hewlett-Packard’s 15 GHz f_t

ISOSAT-II process, which

(1ST AND 2ND STAGES)

combines stepper lithography, ion

implantation, self-alignment

techniques, and gold metallization

to produce RFICs with superior

performance, uniformity and

reliability .

(6)

(4)

AND V

OUT

CC2

(3RD STAGE BIAS,

OPEN COLLECTOR)

(1, 3, 7, 8)

GROUND

(5)

POWER CONTROL

5965-9661E

6-76

12 3 4 5 6 7 8

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