HMC659LC5TR

更新时间： 2024-02-08 00:37:54

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器功率放大器
页数	文件大小	规格书
8页	288K
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数据手册

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HMC659LC5TR 数据手册

HMC659LC5

v01.0308

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 15 GHz

Power Compression @ 2 GHz

Power Compression @ 7 GHz

Pout

Gain

PAE

Pout

Gain

PAE

10 11 12 13 14 15

INPUT POWER (dBm)

Power Compression @ 15 GHz

Power Dissipation

Max Pdis @ 85C

2 GHz

12 GHz

Pout

Gain

PAE

10 11 12 13 14 15

-10

-5

INPUT POWER (dBm)

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

Gate Bias Voltage (Vgg1)

Gate Bias Voltage (Vgg2)

RF Input Power (RFIN)(Vdd = +8 Vdc)

Channel Temperature

9 Vdc

Vdd (V)

7.5

Idd (mA)

299

-2 to 0 Vdc

+2V to +4V

+20 dBm

175 °C

8.0

300

8.5

301

Continuous Pdiss (T= 85 °C)

(derate 37 mW/°C above 85 °C)

3.3 W

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Thermal Resistance

(channel to ground paddle)

27.3 °C/W

Storage Temperature

Operating Temperature

-65 to 150 °C

-40 to 85 °C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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