HMC554ACHIPS
Data Sheet
MOUNTING AND BONDING TECHNIQUES
Attach the die directly to the ground plane eutectically or with
conductive epoxy. To bring RF to and from the chip, 50 Ω
microstrip transmission lines on 0.127 mm (0.005”) thick,
alumina thin film substrates are recommended (see Figure 85).
If using 0.254 mm (0.010”) thick, alumina thin film substrates,
raise the die 0.150 mm (0.006”) so that the surface of the die is
coplanar with the surface of the substrate. A way to accomplish
this is to attach the 0.102 mm (0.004”) thick die to a 0.150 mm
(0.006”) thick molybdenum heat spreader (moly tab) which is
then attached to the ground plane (see Figure 86). Place microstrip
substrates as close to the die as possible to minimize bond wire
length. Typical die to substrate spacing is 0.076 mm (0.003”).
Cleanliness
Handle the chips in a clean environment. Do not attempt to
clean the chips using liquid cleaning systems.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Transients
Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize
inductive pickup.
General Handling
Handle the chip along the edges with a vacuum collet or with a
sharp pair of bent tweezers. The surface of the chip has fragile
air bridges and must not be touched with a vacuum collet,
tweezers, or fingers.
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.076mm
(0.003")
MOUNTING
The chip is back metallized and can be die mounted either with
gold (Au)/tin (Sn) eutectic preforms or with electrically
conductive epoxy. The mounting surface must be clean and flat.
RF GROUND PLANE
Eutectic Die Attach
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
An 80/20 gold and tin preform is recommended with a work
surface temperature of 255°C and a tool temperature of 265°C.
When hot 90/10 nitrogen (N)/hydrogen (H) gas is applied, the
tool tip temperature must be 290°C. Do not expose the chip to a
temperature greater than 320°C for more than 20 seconds. No
more than 3 seconds of scrubbing is required for attachment.
Figure 85. Bonding RF Pads to 0.127 mm Substrate
0.102mm (0.004") THICK GaAs MMIC
WIRE BOND
0.076mm
(0.003")
Epoxy Die Attach
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
chip when the chip is placed into position. Cure epoxy per the
schedule of the manufacturer.
RF GROUND PLANE
0.150mm
(0.006") THICK
MOLY TAB
0.254mm (0.010") THICK ALUMINA
THIN FILM SUBSTRATE
WIRE BONDING
Figure 86. Bonding RF Pads to 0.254 mm Substrate
Ball or wedge bond with 0.025 mm (0.00098”) diameter, pure
gold wire is recommended. Thermosonic wire bonding with a
nominal stage temperature of 150°C, and either a ball bonding
force of 40 grams to 50 grams or a wedge bonding force of
18 grams to 22 grams is recommended. Use the minimum level
of ultrasonic energy to achieve reliable wire bonds. Wire bonds
must start on the chip and terminate on the package or
substrate. All bonds must be as short as possible at <0.31 mm
(0.01220”).
HANDLING PRECAUTIONS
Follow the precautions in the Storage section, the Cleanliness
section, the Static Sensitivity section, the Transients section, and
the General Handling section to avoid permanent damage to
the HMC554ACHIPS.
Storage
All bare dice are placed in either waffle-based or gel-based, ESD
protective containers and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag is open, store
all dies in a dry nitrogen environment.
Rev. 0 | Page 26 of 28
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