HMC508LP5 / 508LP5E
v04.0811
MMIC VCO w/ HALF FREQUENCY
OUTPUT 7.3 - 8.2 GHz
Typical Applications
Features
Low noise MMIC VCO w/Half Frequency, for:
Dual Output: Fo = 7.3 - 8.2 GHz
Fo/2 = 3.65 - 4.1 GHz
• VSAT Radio
Pout: +15.0 dBm
• Point to Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• Military End-Use
Phase Noise: -116 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
Functional Diagram
General Description
The HMC508LP5 & HMC508LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
VCOs. The HMC508LP5 & HMC508LP5E integrate
resonators, negative resistance devices, varactor
diodes and feature a half frequency output. The VCO’s
phase noise performance is excellent over temper-
ature, shock, and process due to the oscillator’s
monolithic structure. Power output is +15 dBm typical
from a +5V supply. The voltage controlled oscillator
is packaged in a leadless QFN 5x5 mm surface
mount package, and requires no external matching
components.
8
Electrical Specifications, TA = +25° C, Vcc = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/2
7.3 - 8.2
3.65 - 4.1
GHz
GHz
Frequency Range
RFOUT
RFOUT/2
+12
+4
+17
+10
dBm
dBm
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
-116
240
2
dBc/Hz
V
Vtune
2
13
280
10
Supply Current (Icc) (Vcc = +5.0V)
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
200
mA
µA
dB
Harmonics/Subharmonics
1/2
2nd
3rd
40
20
35
dBc
dBc
dBc
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
8
MHz pp
MHz/V
MHz/°C
10
1.0
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respFonosirbilpityriiscaess,umdeedlbivyeAnrayloag nDedvicteos fporliatscusee,onorrdfoer rasny:inHfriintgteitmeenMts oicf praotewntas ovreothCerorporation, 20 Alpha Road, Chelmsford, MA 01824
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rights of third parties that may result from its use. Specifications subject to change without notice. No
Phone: 978-250-3343
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8 - 1
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